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參數(shù)資料
| 型號(hào)： | SFH615A-4 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | 光電耦合器 |
| 英文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封裝： | ROHS COMPLIANT, PLASTIC, DIP-4 |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 128K |
| 代理商： | SFH615A-4 |
Document Number: 83671
For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 2.2, 05-Oct-09
633
SFH615A, SFH6156
Optocoupler, Phototransistor Output,
High Reliability, 5300 VRMS
Vishay Semiconductors
Notes
(1) The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the
temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of
PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's thermal characteristics
of optocouplers application note.
(2) For 2 layer FR4 board (4" x 3" x 0.062")
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
LED power dissipation
Pdiss
100
mW
Output power dissipation
Pdiss
150
mW
Maximum LED junction temperature
Tjmax.
125
°C
Maximum output die junction temperature
Tjmax.
125
°C
Thermal resistance, junction emitter to board
θ
EB
173
°C/W
Thermal resistance, junction emitter to case
θ
EC
149
°C/W
Thermal resistance, junction detector to board
θ
DB
111
°C/W
Thermal resistance, junction detector to case
θ
DC
127
°C/W
Thermal resistance, junction emitter to
junction detector
θ
ED
95
°C/W
Thermal resistance, board to ambient (2)
θ
BA
195
°C/W
Thermal resistance, case to ambient (2)
θ
CA
3573
°C/W
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 60 mA
VF
1.25
1.65
V
Reverse current
VR = 6 V
IR
0.01
10
A
Capacitance
VR = 0 V, f = 1 MHz
CO
13
pF
OUTPUT
Collector emitter capacitance
VCE = 5 V, f = 1 MHz
CCE
5.2
pF
Collector emitter leakage current
VCE = 10 V
SFH615A-1
ICEO
250
nA
SFH6156-1
ICEO
250
nA
SFH615A-2
ICEO
250
nA
SFH6156-2
ICEO
250
nA
SFH615A-3
ICEO
5
100
nA
SFH6156-3
ICEO
5
100
nA
SFH615A-4
ICEO
5
100
nA
SFH6156-4
ICEO
5
100
nA
COUPLER
Collector emitter saturation
voltage
IF = 10 mA, IC = 2.5 mA
VCEsat
0.25
0.4
V
Coupling capacitance
CC
0.4
pF
T
A
θ
CA
T
C
T
JD
T
JE
T
B
θ
EC
θ
EB
θ
DC
θ
DB
θ
BA
θ
DE
T
A
19996
Package
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