參數(shù)資料
型號(hào)： SFH608-3X007T
廠商： VISHAY SEMICONDUCTORS
元件分類： 光電耦合器
英文描述： SFH608 - Optocoupler, Phototransistor Output, Low Input Current, with Base Connection, 5300 VRMS
中文描述： Transistor Output Optocouplers Phototransistor Out Single CTR>100-200%
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 120K
代理商： SFH608-3X007T
www.vishay.com
602
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83664
Rev. 1.5, 10-Dec-08
SFH608
Vishay Semiconductors
Optocoupler, Phototransistor Output,
Low Input Current, with Base
Connection, 5300 V
RMS
Notes
(1)
T
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER
INPUT
Reverse voltage
DC forward current
Surge forward current
Total power dissipation
OUTPUT
Collector emitter voltage
Collector base voltage
Emitter base voltage
Collector current
Surge collector current
Total power dissipation
COUPLER
Isolation test voltage
between emitter and detector
Creepage distance
Clearance distance
Comparative tracking index per
DIN IEC 112/VDE0303, part 1
TEST CONDITION
SYMBOL
VALUE
UNIT
V
R
I
F
I
FSM
P
diss
6
V
50
2.5
70
mA
A
mW
t
P
≤
10 μs
V
CE
V
CBO
V
EBO
I
C
55
55
7
50
100
150
V
V
V
mA
mA
mW
t
P
≤
1.0 ms
P
diss
t = 1.0 s
V
ISO
5300
V
RMS
≥
7
≥
7
mm
mm
175
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
T
stg
T
amb
≥
10
12
≥
10
11
Ω
Ω
°C
°C
Storage temperature range
Operating temperature range
- 55 to + 150
- 55 to + 100
Soldering temperature
(2)
max. 10 s, dip soldering: distance
to seating plane
≥
1.5 mm
T
sld
260
°C
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Reverse voltage
Reverse current
Capacitance
Thermal resistance
OUTPUT
Collector emitter voltage
Emitter base voltage
Collector emitter capacitance
Collector base capacitance
Emitter base capacitance
Thermal resistance
Collector emitter leakage current
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
I
F
= 5 mA
I
R
= 10 μA
V
R
= 6 V
V
R
= 0 V, f = 1 MHz
V
F
V
R
I
R
C
O
R
thja
1.1
1.5
V
V
μA
pF
K/W
6
0.01
25
1070
10
I
CE
= 10 μA
I
EB
= 10 μA
V
CE
= 5 V, f = 1 MHz
V
CE
= 5 V, f = 1 MHz
V
CE
= 5 V, f = 1 MHz
V
CEO
V
EBO
C
CE
C
CB
C
EB
R
thja
I
CEO
55
7
V
V
pF
pF
pF
K/W
nA
10
16
10
500
10
V
CE
= 10 V
200
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