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參數(shù)資料
| 型號： | SFH320-4 |
| 廠商： | SIEMENS A G |
| 元件分類： | 光敏三極管 |
| 英文描述： | NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 188K |
| 代理商： | SFH320-4 |
Semiconductor Group
4
SFH 320
SFH 320 FA
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen
Ziffern gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished
by arabian figures.
1)
I
PCEmin
ist der minimale Fotostrom der jeweiligen Gruppe
1)
I
PCEmin
is the min. photocurrent of the specified group
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
SFH
320/FA
-2
-3
-4
Fotostrom,
λ =
950 nm
Photocurrent
E
e
= 0.1 mW/cm
2
,
V
CE
= 5 V
SFH 320:
E
v
= 1000 Ix, Normlicht/standard
light A,
V
CE
= 5 V
Anstiegszeit/Abfallzeit
Rise and fall time
I
C
= 1 mA,
V
CC
= 5 V,
R
L
= 1 k
Kollektor-Emitter-
Sttigungsspannung
Collector-emitter saturation voltage
I
C
=
I
PCEmin
1)
×
0.3,
E
e
= 0.1 mW/cm
2
I
PCE
I
PCE
≥
16
16 ... 32
420
25 ... 50
650
≥
40
1000
μ
A
μ
A
t
r
,
t
f
7
6
7
8
μ
s
V
CEsat
150
150
150
150
mV
Directional characteristics
S
rel
=
f
(
)
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| SFH320-4-Z | 制造商:OSRAM 功能描述: |
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| SFH320F-4 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package |
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