參數(shù)資料
型號: SFF4393A2GW
廠商: SOLID STATE DEVICES INC
元件分類: 功率晶體管
英文描述: Dual Microminiature Package 50 mA 40 Volts Dual N-Channel JFET Transistor
中文描述: 2 CHANNEL, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
封裝: GW, MICRO MINIATURE PACKAGE-6
文件頁數(shù): 1/2頁
文件大?。?/td> 166K
代理商: SFF4393A2GW
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SFF4393A2 __ __
Package
3
/
GW = GULLWING
Screening
2/
__
= Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
SFF4393A2GW
Dual Microminiature Package
50 mA 40 Volts
Dual N-Channel JFET Transistor
Features:
Low ON Resistance
Low Capacitance, < 4 pF
Fast Switching, t
on
< 5 ns
Used for Analog Switches, Choppers, Current
Limiters, and Sample-and-Hold Applications
TX, TXV, and S-Level Screening Available.
Consult Factory.
Maximum Ratings
Symbol
Value
Units
Drain – Source Voltage
V
DS
40
Volts
Drain – Gate Voltage
V
DG
40
Volts
Reverse Gate – Source Voltage
V
SG
40
Volts
Drain Current
I
D
50
mA
Power Dissipation @ T
A
= 25
o
C
Per Device
Total
P
D
500
660
245
mW
mW
Maximum Thermal Resistance
Junction to Ambient
R
Θ
JA
5/
oC/W
Lead Temperature
(1/16” from the seated surface for 60 seconds)
T
L
300
oC
Operating & Storage Temperature
T
OP &
T
STG
-65 to +200
oC
PACKAGE OUTLINE: GULLWING (GW)
P
P
P
P
P
P
P
P
S
.193
.015±.010
.040
±.010
.350
±.010
6x R.010
.033
3x .015
.010
.107
.130
2x .050
(=.100)
6x .030
.107
.034
.125
6x .010
.025
5x R.018
.015
.035
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0010A
DOC
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