參數(shù)資料
型號: SFF40N30Z
廠商: SOLID STATE DEVICES INC
元件分類: 功率晶體管
英文描述: 40 AMP / 300 Volts 0.10 OHM N-Channel Power MOSFET
中文描述: 40 A, 300 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: HERMETIC SEALED, TO-254Z, 3 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 55K
代理商: SFF40N30Z
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SFF40N30 __ __ __
|
|
|
|
|
|
|
|
|
+
Package
3/
M = TO-254
|
|
|
|
|
+
Lead Option
3/
__
= Straight Leads
DB = Down Bend
UB = Up Bend
+
Screening
2/
__
= Not Screen
TX = TX Level
TXV = TXV Level
S = S Level
Z = TO-254Z
SFF40N30M
SFF40N30Z
40 AMP / 300 Volts
0.10
W
N-Channel Power MOSFET
Features:
Rugged Construction with Polysilicon Gate Cell
Low R
DS(ON)
and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dV/dt Performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy Paralleling
Ceramic Seals for Improved Hermeticity
Hermetically Sealed Package
TX, TXV, Space Level Screening Available
Replacement for IXTH40N30 Types
Maximum Ratings
Symbol
Value
Units
Drain – Source Voltage
V
DS
300
Volts
Gate – Source Voltage
V
GS
±20
Volts
Continuous Collector Current
I
D
40
Amps
Power Dissipation
T
C
= 25oC
T
C
= 55oC
P
D
150
114
W
Operating & Storage Temperature
Top & Tstg
-55 to +150
oC
Maximum Thermal Resistance
Junction to Case
R
q
JC
0.83
oC/W
TO-254 (M)
TO-254Z (Z)
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00141E
DOC
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