- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374774 > SFD3055 (Electronic Theatre Controls, Inc.) Logic N-Channel MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | SFD3055 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Logic N-Channel MOSFET |
| 中文描述： | 邏輯N溝道MOSFET |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 971K |
| 代理商： | SFD3055 |
S FD3055L
Electrical Characteristics
( T
C
= 25 °C unless otherwise noted )
Symbol
Off Characteristics
Parameter
Test Conditions
Min
Typ
Max
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250uA
30
-
-
V
Δ
BV
DSS
/
Δ
T
J
Breakdown Voltage Temperature coef-
ficient
I
D
= 250uA, referenced to 25 °C
-
0.027
-
V/°C
I
DSS
Drain-Source Leakage Current
V
DS
= 30V, V
GS
= 0V
-
-
1
uA
V
DS
= 24V, T
C
= 125 °C
-
-
10
uA
I
GSS
Gate-Source Leakage, Forward
V
GS
= 20V, V
DS
= 0V
-
-
100
nA
Gate-Source Leakage, Reverse
V
GS
= -20V, V
DS
= 0V
-
-
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250uA
1.0
-
3.0
V
R
DS(ON)
Static Drain-Source On-state Resis-
tance
V
GS
= 10 V, I
D
= 6A
V
GS
= 4.5 V, I
D
= 6A
-
-
0.066
0.095
0.15
0.30
Dynamic Characteristics
C
iss
Input Capacitance
V
GS
=0 V, V
DS
=25V, f = 1MHz
-
205
265
pF
C
oss
C
rss
Output Capacitance
-
95
120
Reverse Transfer Capacitance
Dynamic Characteristics
-
30
40
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Turn-on Delay Time
V
DD
=15V, I
D
=12A, R
G
=50
※
see fig. 13.
(Note 4, 5)
-
4.5
19
ns
Rise Time
-
3
16
Turn-off Delay Time
-
12
34
Fall Time
-
18
46
Total Gate Charge
V
DS
=24V, V
GS
=10V, I
D
=12A
※
see fig. 12.
(Note 4, 5)
-
6.5
8.5
nC
Gate-Source Charge
-
1.4
-
Q
gd
Gate-Drain Charge(Miller Charge)
-
1.6
-
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit.
I
S
I
SM
V
SD
Continuous Source Current
Integral Reverse p-n Junction
Diode in the MOSFET
-
-
12
A
Pulsed Source Current
-
-
30
Diode Forward Voltage
I
S
=12A, V
GS
=0V
-
-
1.5
V
t
rr
Reverse Recovery Time
I
S
=12A,V
GS
=0V,dI
F
/dt=100A/us
-
76
-
ns
Q
rr
Reverse Recovery Charge
-
44
-
nC
※
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 200uH, I
AS
=12A, V
DD
= 15V, R
G
= 0
, Starting T
J
=
25°C
3. I
SD
≤
12A, di/dt
≤
300A/us, V
DD
≤
BV
DSS
, Starting T
J
=
25°C
4. Pulse Test : Pulse Width
≤
300us, Duty Cycle
≤
2%
5. Essentially independent of operating temperature.
2/7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SFD30N06 | N-Channel MOSFET |
| SFD400CE40E | RELAIS HERMETIQUE 2 RT DOUBLE COUPURE 10 A/56 Vcc |
| SFD45N03L | Logic N-Channel MOSFET |
| SFD602G | 6.0 AMPS. Glass Passivated Super Fast Rectifiers |
| SFD603G | 6.0 AMPS. Glass Passivated Super Fast Rectifiers |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SFD3055L | 制造商:SEMIWELL 制造商全稱:SEMIWELL 功能描述:Logic N-Channel MOSFET |
| SFD30N06 | 制造商:SEMIWELL 制造商全稱:SEMIWELL 功能描述:N-Channel MOSFET |
| SFD30T100Z378Z-0000 | 制造商:Cornell Dubilier Electronics 功能描述:OIL FILLED CAPACITOR |
| SFD313 | 制造商:CPI 制造商全稱:CPI 功能描述:1 MW C-band coaxial magnetron |
| SFD325 | 制造商:CPI 制造商全稱:CPI 功能描述:60 kW, Ku-band coaxial magnetron |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。