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參數(shù)資料
| 型號： | SF16-TB |
| 廠商： | Won-Top Electronics Co., Ltd. |
| 英文描述： | 1.0A SUPER-FAST RECTIFIER |
| 中文描述： | 安培超快速整流 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 46K |
| 代理商： | SF16-TB |
SF11 – SF17
1 of 3 2002 Won-Top Electronics
SF11 – SF17
1.0A SUPER-FAST RECTIFIER
Features
!
Diffused Junction
!
Low Forward Voltage Drop
!
High Current Capability A B A
!
High Reliability
!
High Surge Current Capability
Mechanical Data
C
!
Case: Molded Plastic D
!
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
!
Polarity: Cathode Band
!
Weight: 0.34 grams (approx.)
!
Mounting Position: Any
!
Marking: Type Number
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
SF11
SF12
SF13
SF14
SF15
SF16
SF17
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
50
100
150
200
300
400
600
V
RMS Reverse Voltage
V
R(RMS)
35
70
105
140
210
280
420
V
Average Rectified Output Current
(Note 1) @T
A
= 55°C
I
O
1.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
30
A
Forward Voltage @I
F
= 1.0A
V
FM
0.95
1.3
1.7
V
Peak Reverse Current @T
= 25°C
At Rated DC Blocking Voltage @T
A
= 100°C
I
RM
5.0
100
μA
Reverse Recovery Time (Note 2)
t
rr
35
nS
Typical Junction Capacitance (Note 3)
C
j
50
25
pF
Operating Temperature Range
T
j
-65 to +125
°C
Storage Temperature Range
T
STG
-65 to +150
°C
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
WTE
POWER SEMICONDUCTORS
DO-41
Min
25.4
4.06
0.71
2.00
Dim
A
B
C
D
Max
—
5.21
0.864
2.72
All Dimensions in mm
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相關代理商/技術參數(shù) |
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|---|---|
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