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參數(shù)資料
| 型號(hào)： | SEMH1 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | NPN Silicon Digital Transistor Array Preliminary data |
| 中文描述： | NPN硅數(shù)字晶體管陣列的初步數(shù)據(jù) |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 142K |
| 代理商： | SEMH1 |
SEMH1
Feb-25-2004
2
Electrical Characteristics
at
T
A
=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 100 μA,
I
B
= 0 A
Collector-base breakdown voltage
I
C
= 10 μA,
I
E
= 0 A
Emitter-base breakdown voltage
I
E
= 10 μA,
I
C
= 0 A
Collector cutoff current
V
CB
= 40 V,
I
E
= 0 A
Emitter cutoff current
V
EB
= 10 V,
I
C
= 0 A
DC current gain 1)
I
C
= 5 mA,
V
CE
= 5 V
Collector-emitter saturation voltage1)
I
C
= 10 mA,
I
B
= 0.5 mA
Input off voltage
I
C
= 100 μA,
V
CE
= 5 V
Input on Voltage
I
C
= 2 mA,
V
CE
= 0.3 V
Input resistor
V
(BR)CEO
50
-
-
V
V
(BR)CBO
50
-
-
V
(BR)EBO
-
-
-
I
CBO
-
-
100
nA
I
EBO
-
-
350
μA
h
FE
50
-
-
-
V
CEsat
-
-
0.3
V
V
i(off)
0.8
-
1.5
V
i(on)
1
-
2.5
R
1
R
1
/
R
2
15
22
29
k
-
Resistor ratio
0.9
1
1.1
AC Characteristics
Transition frequency
I
C
= 10 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
f
T
-
130
-
MHz
C
cb
-
3
-
pF
1) Pulse test: t < 300
μ
s; D < 2%
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