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| 型號(hào)： | SEMD48 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | NPN/PNP Silicon Digital Transistor Array Preliminary data |
| 中文描述： | npn型/進(jìn)步黨硅數(shù)字晶體管陣列的初步數(shù)據(jù) |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 163K |
| 代理商： | SEMD48 |
SEMD48
Feb-26-2004
1
NPN/PNP Silicon Digital Transistor Array
Preliminary data
Switching circuit, inverter, interface circuit,
driver circuit
Two (galvanic) internal isolated NPN/PNP
Transistors in one package
Built in bias resistor
NPN:
R
1
= 47k
,
R
2
= 47k
PNP:
R
1
= 2.2k
,
R
2
= 47k
Tape loading orientation
1
3
6
5
4
2
EHA07176
6
5
4
3
2
1
C1
B2
E2
C2
B1
E1
1
R
R
2
R
1
R
2
TR1
TR2
1
2
3
4 5
6
Direction of Unreeling
Top View
Position in tape: pin 1
same of feed hole
side
W
Marking on SOT666 package
(for example W R)
corresponds to pin 1 of device
Type
SEMD48
Marking
WT
Pin Configuration
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
Package
Maximum Ratings
Parameter
Collector-emitter voltage
Symbol
V
CEO
V
CBO
V
EBO
V
EBO
V
i(on)
V
i(on)
I
C
I
C
P
tot
T
j
T
stg
Value
50
Unit
V
Collector-base voltage
50
Emitter-base voltage NPN
10
Emitter-base voltage PNP
5
Input on voltage NPN
Input on voltage PNP
50
10
DC collector current NPN
70
mA
DC collector current PNP
100
250
Total power dissipation
,
T
S
= 75 °C
Junction temperature
mW
150
°C
Storage temperature
-65...+150
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