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參數(shù)資料
| 型號(hào)： | SE10PG-M3/85A |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-220AA |
| 封裝： | HOLOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMP, 2 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 84K |
| 代理商： | SE10PG-M3/85A |
Document Number: 89024
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 19-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SE10Pb thru SE10PJ
Vishay General Semiconductor
New Product
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Instantaneous Forward Characteristics
0
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
175
150
Lead Temperature (°C)
A
v
er
age
F
orw
ard
C
u
rrent
(A)
T
L Measured
at the Cathode Band Terminal
Resistive or Inductive Load
0
0.2
0.4
0.6
0.8
1.2
1.0
0
0.2
0.4
0.8
1.0
1.2
0.6
Average Forward Current (A)
A
v
er
age
P
o
w
e
rLoss
(W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = t
p/T
t
p
T
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
orw
ard
C
u
rrent
(A)
10
1
0.1
0.5
0.7
0.9
1.1
1.3
1.5
T
J = 175 °C
T
J = 150 °C
T
J = 25 °C
100
10
1
0.1
0.01
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
e
rse
C
u
rrent
(A)
T
J = 175 °C
T
J = 150 °C
T
J = 25 °C
Reverse Voltage (V)
J
u
nction
Capaci
tance
(pF)
100
10
1
0.1
1
10
100
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SE10PDHM3/84A | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-220AA |
| SE10PGHM3/85A | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-220AA |
| SE15PG-HM3/84A | 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-220AA |
| SE15PJ-HM3/84A | 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-220AA |
| SE15PJ-M3/85A | 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-220AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SE10PJ | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Surface Mount ESD Capability Rectifiers |
| SE10PJ-E3/84A | 功能描述:整流器 600 Volt 1.0 Amp ESD Capability RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| SE10PJ-E3/85A | 功能描述:整流器 600 Volt 1.0 Amp ESD Capability RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| SE10PJHM3/84A | 功能描述:整流器 600 Volt 1.0 Amp ESD Capability RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| SE10PJHM3/85A | 功能描述:整流器 600 Volt 1.0 Amp ESD Capability RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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