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參數(shù)資料
| 型號(hào)： | SE07PD-M3/84A |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 0.7 A, 200 V, SILICON, SIGNAL DIODE, DO-220AA |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMP, 2 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 81K |
| 代理商： | SE07PD-M3/84A |
Document Number: 89023
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 19-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SE07PB thru SE07PJ
Vishay General Semiconductor
New Product
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
255075
100
125
175
150
Lead Temperature (°C)
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
T
L Measured
at the Cathode Band Terminal
Resistive or Inductive Load
0.1
0
0.2
0.4
0.3
0.6
0.7
0.5
0.8
0.9
0
0.1
0.2
0.3
0.4
0.5
0.7
0.8
0.6
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
Average Forward Current (A)
A
v
er
age
P
o
w
e
rLoss
(W)
D = t
p/T
t
p
T
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
orw
ard
C
u
rrent
(A)
10
1
0.1
0.6
0.8
1.0
1.2
1.4
1.6
T
J = 175 °C
T
J = 150 °C
T
J = 25 °C
100
10
1
0.1
0.01
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(A)
T
J = 150 °C
T
J = 175 °C
T
J = 25 °C
Reverse Voltage (V)
J
u
nction
Capaci
tance
(pF)
100
10
1
0.1
1
10
100
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SE10PB-M3/85A | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-220AA |
| SE10PD-M3/84A | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-220AA |
| SE10PD-M3/85A | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-220AA |
| SE10PDHM3/85A | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-220AA |
| SE10PGHM3/84A | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-220AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SE07PG | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Surface Mount ESD Capability Rectifiers |
| SE07PG-E3/84A | 功能描述:整流器 400 Volt 0.7 Amp ESD Capability RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| SE07PG-E3/85A | 功能描述:整流器 400 Volt 0.7 Amp ESD Capability RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| SE07PG-M3/84A | 功能描述:二極管 - 通用，功率，開關(guān) 400volt 0.7amp RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| SE07PG-M3/85A | 功能描述:二極管 - 通用，功率，開關(guān) 400volt 0.7amp RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
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