參數(shù)資料
型號: SE07PB-E3/84A
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: 0.7 A, 100 V, SILICON, SIGNAL DIODE, DO-220AA
封裝: ROHS COMPLIANT, PLASTIC, SMP, 2 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 99K
代理商: SE07PB-E3/84A
New Product
SE07PB thru SE07PJ
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89023
Revision: 26-May-08
2
Note:
(1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0 mm copper pad areas. RθJL is measured
at the terminal of cathode band. RθJC is measured at the top center of the body
Notes:
(1) Immunity to IEC-61000-4-2 air discharge mode has a typical performance > 30 kV
(2) System ESD standard
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
THERMAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
SE07PB
SE07PD
SE07PG
SE07PJ
UNIT
Typical thermal resistance (1)
RθJA
RθJL
RθJC
105
25
30
°C/W
IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS
(TA = 25 °C, unless otherwise noted)
STANDARD
TEST TYPE
TEST CONDITIONS
SYMBOL
CLASS
VALUE
AEC Q101-001
Human body model (contact mode)
C = 100 pF, R = 1.5 k
Ω
VC
H3B
> 8 kV
AEC Q101-002
Machine model (contact mode)
C = 200 pF, R = 0
Ω
M4
> 400 V
JESD22-A114
Human body model (contact mode)
C = 150 pF, R = 1.5 k
Ω
3B
> 8 kV
JESD22-A115
Machine model (contact mode)
C = 200 pF, R = 0
Ω
C
> 400 V
IEC-61000-4-2 (2)
Human body model (contact mode)
C = 150 pF, R = 150
Ω
4> 8 kV
Human body model (air-discharge mode) (1)
C = 150 pF, R = 150
Ω
4
> 15 kV
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SE07PJ-E3/84A
0.024
84A
3000
7" diameter plastic tape and reel
SE07PJ-E3/85A
0.024
85A
10 000
13" diameter plastic tape and reel
Figure 1. Maximum Forward Current Derating Curve
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
255075
100
125
175
150
Lead Temperature (°C)
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
T
L Measured
at the Cathode Band Terminal
Resistive or Inductive Load
Figure 2. Forward Power Loss Characteristics
0.1
0
0.2
0.4
0.3
0.6
0.7
0.5
0.8
0.9
0
0.1
0.2
0.3
0.4
0.5
0.7
0.8
0.6
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
Average Forward Current (A)
A
v
er
age
P
o
w
er
Loss
(
W
)
D = t
p/T
t
p
T
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SE07PB-M3/85A 功能描述:二極管 - 通用,功率,開關(guān) 100volt 0.7amp RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube
SE07PD 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Surface Mount ESD Capability Rectifiers
SE07PD-E3/84A 功能描述:整流器 200 Volt 0.7 Amp ESD Capability RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
SE07PD-E3/85A 功能描述:整流器 200 Volt 0.7 Amp ESD Capability RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel