參數(shù)資料
型號(hào): SDT12S60
廠商: INFINEON TECHNOLOGIES AG
元件分類: 整流器
英文描述: 12 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-220AC
封裝: ROHS COMPLIANT, PLASTIC, TO-220, 2 PIN
文件頁數(shù): 1/8頁
文件大?。?/td> 515K
代理商: SDT12S60
200
8-06-03
Rev. 2.
3
Page 1
SDT12S60
thinQ!
SiC Schottky Diode
Silicon Carbide Schottky Diode
Worlds first 600V Schottky diode
Revolutionary semiconductor
material - Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on
the switching behavior
No forward recovery
Product Summary
VRRM
600
V
Qc
30
nC
IF
12
A
P
G-TO220-2-2.
Pin 1
Pin 2
C
A
Type
Package
Ordering Code
SDT12S60
P
G-TO220-2-2.
Q67040-S4470
Marking
D12S60
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous forward current, T
C=100°C
IF
12
A
RMS forward current
, f=50Hz
IFRMS
17
Surge non repetitive forward current, sine halfwave
TC=25°C, tp=10ms
IFSM
36
Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
IFRM
49
Non repetitive peak forward current
tp=10s, TC=25°C
IFMAX
120
i 2t value
, T
C=25°C, tp=10ms
∫i2dt
6.48
As
Repetitive peak reverse voltage
VRRM
600
V
Surge peak reverse voltage
VRSM
600
Power dissipation
, T
C=25°C
Ptot
88.2
W
Operating and storage temperature
Tj , Tstg
-55... +175
°C
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