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參數(shù)資料
| 型號(hào)： | SDT05S60 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Silicon Carbide Schottky Diode |
| 中文描述： | 碳化硅肖特基二極管 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 357K |
| 代理商： | SDT05S60 |
200
5
-0
2
-
17
Rev. 2.
1
Page 1
SDT05S60
thinQ!
￥
SiC Schottky Diode
Silicon Carbide Schottky Diode
Worlds first 600V Schottky diode
Revolutionary semiconductor
material - Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on
the switching behavior
No forward recovery
Product Summary
V
RRM
Q
c
I
F
600
V
14
nC
5
A
P
G
-TO220-2-2.
Pin 1
Pin 2
C
A
Type
SDT05S60
Package
P
G
-TO220-2-2.
Ordering Code
Q67040S4644
Marking
D05S60
Maximum Ratings
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
I
F
I
FRMS
I
FSM
Value
5
Unit
A
Continuous forward current,
T
C
=100°C
RMS forward current
,
f
=50
Hz
Surge non repetitive forward current, sine halfwave
7.1
T
C
=25°C,
t
p
=10ms
Repetitive peak forward current
18.5
T
j
=150°C,
T
C
=100°C,
D
=0.1
Non repetitive peak forward current
I
FRM
21
t
p
=10μs,
T
C
=25°C
i
2
t
value
,
T
C
=25°C,
t
p
=10ms
Repetitive peak reverse voltage
I
FMAX
50
3
i
2
d
t
V
RRM
V
RSM
P
tot
T
j,
T
stg
1.7
A2s
V
600
Surge peak reverse voltage
600
43
Power dissipation
,
T
C
=25°C
Operating and storage temperature
W
-55... +175
°C
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|---|---|
| SDT05S60_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Carbide Schottky Diode |
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