參數(shù)資料
型號(hào)： SDR9TSMSTXV
廠商： SOLID STATE DEVICES INC
元件分類： 整流器
英文描述： 9 A, 1500 V, SILICON, RECTIFIER DIODE
封裝： HERMETIC SEALED PACKAGE-2
文件頁(yè)數(shù)： 2/2頁(yè)
文件大小： 69K
代理商： SDR9TSMSTXV
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0136A
DOC
ELECTRICAL CHARACTERISTICS3/
CHARACTERISTICS
SYMBOL
MAXIMUM
UNIT
Instantaneous Forward Voltage Drop
(pulsed)
IF = 9.0 Adc, TA = +25°C
IF = 6.0 Adc, TA = +25°C
IF = 9.0 Adc, TA = -55°C
VF1
VF2
VF3
1.20
1.10
1.40
Vdc
Reverse Leakage Current
(VR = 80% rated)
TA = +25°C
TA =+100°C
IR1
IR2
1.0
50
μA
Minimum Breakdown Voltage
(IR = 50 uA)
SDR9P
SDR9R
SDR9T
BVR
1300
1400
1500
V
(min)
Junction Capacitance
(VR = 10 Vdc, f = 1MHz, TA = 25°C)
CJ
50
pF
Reverse Recovery Time
(IF = 500mA, IR = 1A, IRR = 250mA, TA = 25°C)
trr
5
μs
Package Outlines:
DIMENSIONS (inches)
DIM.
Minimum
Maximum
DIM.
Minimum
Maximum
A
---
.170
A (SMS)
.170
.180
B
.210
.250
B
.260
.300
C
.037
.043
C
.020
.030
D
1.000
---
D
.002
---
AXIAL
SMS
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR9P thru SDR9T
Series
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