參數(shù)資料
型號: SDR998DN
廠商: SOLID STATE DEVICES INC
元件分類: 整流器
英文描述: 60 A, 800 V, SILICON, RECTIFIER DIODE, TO-258AA
封裝: HERMETIC SEALED, TO-258, 3 PIN
文件頁數(shù): 2/2頁
文件大?。?/td> 48K
代理商: SDR998DN
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0119B
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR998CTN&P
thru
SDR9912CTN&P
Electrical Characteristics
Symbol
Min
Max
Units
Instantaneous Forward Voltage Drop
(TA = 25C, 300
sec pulse)
IF = 25Adc
IF = 50Adc
VF1
––
1.95
2.25
Volts
Instantaneous Forward Voltage Drop
(TA = -55C, 300
sec pulse)
(TA = 100C, 300
sec pulse)
IF = 25Adc
VF2
––
1.85
2.00
Volts
Reverse Leakage Current
(Rated VR, TA = 25C, 300
sec pulse minimum)
IR1
––
100
A
Reverse Leakage Current
(Rated VR, TA = 100C, 300
sec pulse minimum)
IR2
––
10
mA
Junction Capacitance
(VR = 10 Vdc, TA = 25C, f = 1MHz)
CJ
––
100
pF
Reverse Recovery Time
(IF = 500 mA, IR = 1A, IRR = 0.25A)
TA = 25C
trr
––
nsec
Case Outline: TO-258
Pin1: Cathode
Pin2: Anode
Pin3: Anode
Case Outline: TO-259
Pin1: Cathode
Pin2: Anode
Pin3: Anode
PIN
1
PIN
2
PIN
3
PIN
1
PIN
2
PIN
3
相關PDF資料
PDF描述
SDR9912CAP 60 A, 1200 V, SILICON, RECTIFIER DIODE, TO-259
SDR9912DN 60 A, 1200 V, SILICON, RECTIFIER DIODE, TO-258AA
SDR9912DP 60 A, 1200 V, SILICON, RECTIFIER DIODE, TO-259
SDR9912CAN 60 A, 1200 V, SILICON, RECTIFIER DIODE, TO-258AA
SDR9910DN 60 A, 1000 V, SILICON, RECTIFIER DIODE, TO-258AA
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