參數(shù)資料
型號(hào): SDR66DRJ
廠(chǎng)商: Solid States Devices, Inc.
英文描述: 40A 35nsec 300-600 V Hyper Fast Centertap Rectifier
中文描述: 40A條35nsec 300-600 V超快速整流器Centertap
文件頁(yè)數(shù): 1/2頁(yè)
文件大小: 68K
代理商: SDR66DRJ
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information
1/
SDR62
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DR = Doubler Reverse
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+
Voltage
3 = 300V, 4 = 400V, 5 = 500V, 6 = 600V
+
Screening
2/
__
= Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Leg Bend Option
(See Figure 1)
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+
Package
J = TO-257(J)
Configuration
CT = Common Cathode,
CA = Common Anode, D = Doubler,
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SDR623CTJ
Thru
SDR626DRJ
40A 35nsec 300-600 V
Hyper Fast Centertap Rectifier
Features
:
Hyper Fast Recovery: 35nsec Maximum
3/
High Surge Rating
Low Reverse Leakage Current
Low Junction Capacitance
Isolated Hermetically Sealed Package
Gold Eutectic Die Attach
Ultrasonic Aluminum Wire Bonds
Available in Common Anode, Common Cathode,
Doubler, and Doubler Reverse Configurations
Custom Lead Forming Available
TX, TXV, and S-Level Screening Available
2/
Maximum Ratings
Symbol
Value
Units
Peak Repetitive Reverse Voltage
SDR623__J
SDR624__J
SDR625__J
SDR626__J
V
RRM
V
RWM
V
R
300
400
500
600
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, T
A
= 25 °C)
4/
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, T
A
= 25
°C)
5/
Io
40
Amps
I
FSM
200
Amps
Operating & Storage Temperature
T
OP
& T
STG
-65 to +175
oC
Maximum Total Thermal Resistance
Junction to Case
4/
Junction to Case
5/
R
q
JC
1.0
2.1
oC/W
-
Notes:
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Recovery Conditions: I
F
= 0.5 Amp, I
R
= 1.0 Amp, rec. to .25 Amp.
4/ Both Legs Tied Together.
5/ Per Leg.
TO-257(J)
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0051D
DOC
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