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參數(shù)資料
| 型號(hào)： | SDR620RJDBTX |
| 廠(chǎng)商： | SOLID STATE DEVICES INC |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | 20 A, 100 V, SILICON, RECTIFIER DIODE, TO-257AA |
| 封裝： | HERMETIC SEALED, TO-257, 3 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 227K |
| 代理商： | SDR620RJDBTX |
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR620J, M & Z
Thru
SDR622J, M & Z
Electrical Characteristics (per leg) 4/
Symbol
Max
Units
Instantaneous Forward Voltage Drop
300sec Pulse, IF = 10A, TA = 25 C
300sec Pulse, IF = 20A, TA = 25 C
300sec Pulse, IF = 10A, TA = 100 C
300sec Pulse, IF = 10A, TA = -55 C
VF1
VF2
VF3
VF4
1.00
1.20
0.90
1.15
VDC
Reverse Leakage Current
(Rated VR , 300sec Pulse Minimum)
TA = 25 C
TA = 100 C
IR1
IR2
10
100
A
Reverse Recovery Time
(IF = 500 mA, IR = 1 Amp, IRR = 250 mA)
tRR
35
nsec
Junction Capacitance
(VR = 10VDC, TA = 25C, f = 1MHz)
CJ
250
pF
Notes:
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Recovery Conditions: IF = 500 mA, IR = 1 Amp, IRR = 250 mA.
4/ Unless Otherwise Specified, All Maximum Ratings/Electrical Characteristics @25°C.
Figure 1- Optional Lead Bends
Suffix JDB, MDB & ZDB
Suffix JUB, MUB & ZUB
Table 1- PIN ASSIGNMENT
Code
Configuration
Pin 1
Pin 2
Pin 3
__
Normal
Cathode
Anode
R
Reverse
Cathode
Anode
TO-257 (Suffix J) Outline:
TO-254 (Suffix M) Outline:
TO-254Z (Suffix Z) Outline:
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0031C
DOC
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