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參數(shù)資料
| 型號(hào)： | SDR60U120PTXV |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 整流器 |
| 英文描述： | 60 A, 1200 V, SILICON, RECTIFIER DIODE, TO-259 |
| 封裝： | HERMETIC SEALED PACKAGE-3 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大小： | 86K |
| 代理商： | SDR60U120PTXV |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0144A
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR60U080N thru SDR60U120N
and
SDR60U080P thru SDR60U120P
Electrical Characteristics
Symbol
Typ
Max
Units
Instantaneous Forward Voltage Drop
(TA = 25C, 300 μsec pulse)
IF = 20Adc
IF = 50Adc
IF = 100Adc
VF1
1.7
1.85
1.98
1.9
2.0
2.5
Volts
Instantaneous Forward Voltage Drop
(TA = -55C, 300 μsec pulse)
IF = 20Adc
IF = 50Adc
IF = 100Adc
VF2
1.75
1.85
1.98
--
2.1
--
Volts
Instantaneous Forward Voltage Drop
(TA = 125C, 300 μsec pulse)
IF = 20Adc
IF = 50Adc
IF = 100Adc
VF3
1.14
1.45
1.7
1.4
1.7
--
Volts
Reverse Leakage Current
(Rated VR, TA = 25C, 300 μsec pulse minimum)
IR1
75
500
μA
Reverse Leakage Current
(Rated VR, TA = 100C, 300 μsec pulse minimum)
(Rated VR, TA = 125C, 300 μsec pulse minimum)
(Rated VR, TA = 150C, 300 μsec pulse minimum)
IR2
5
20
50
--
150
--
mA
Junction Capacitance
(VR = 5 Vdc, TA = 25C, f = 1MHz)
(VR = 10 Vdc, TA = 25C, f = 1MHz)
CJ
200
175
--
300
pF
Reverse Recovery Time
(IF = 500 mA, IR = 1A, IRR = 0.25A)
(IF = 10 A, dIF /dt = 100A/us)
TA = 25C
TA = 100C
TA = 25C
TA = 100C
trr1
trr2
trr3
IRM3
trr4
IRM4
45
150
75
5
150
10
50
--
nsec
A
nsec
A
Case Outline: TO-258
Case Outline: TO-259
Note 1: Pin 2&3 connected together
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