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參數(shù)資料
| 型號(hào)： | SDR55U100DRPS |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類(lèi)： | 整流器 |
| 英文描述： | 55 A, 1000 V, SILICON, RECTIFIER DIODE, TO-259 |
| 封裝： | HERMETIC SEALED PACKAGE-3 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大小： | 101K |
| 代理商： | SDR55U100DRPS |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0119C
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR55U080CT thru
SDR55U120CT Series
Electrical Characteristics (per leg)
Symbol
Typ
Max
Units
Instantaneous Forward Voltage Drop
(TA = 25C, 300 μsec pulse)
IF = 10Adc
IF = 20Adc
IF = 50Adc
VF1
1.75
1.85
2.1
1.9
2.1
2.5
Volts
Instantaneous Forward Voltage Drop
(TA = -55C, 300 μsec pulse)
IF = 10Adc
IF = 20Adc
IF = 50Adc
VF2
1.75
1.85
2.05
1.95
2.1
2.5
Volts
Instantaneous Forward Voltage Drop
(TA = 125C, 300 μsec pulse)
IF = 10Adc
IF = 20Adc
IF = 50Adc
VF3
1.3
1.52
1.88
1.6
1.8
2.35
Volts
Reverse Leakage Current
(Rated VR, TA = 25C, 300 μsec pulse minimum)
IR1
20
100
μA
Reverse Leakage Current
(Rated VR, TA = 100C, 300 μsec pulse minimum)
IR2
1.5
––
mA
Reverse Leakage Current
(Rated VR, TA = 125C, 300 μsec pulse minimum)
IR1
5
20
mA
Reverse Leakage Current
(Rated VR, TA = 150C, 300 μsec pulse minimum)
IR1
15
––
mA
Junction Capacitance
(VR = 5 Vdc, TA = 25C, f = 1MHz)
(VR = 10 Vdc, TA = 25C, f = 1MHz)
CJ
50
45
––
75
pF
Reverse Recovery Time
(IF = 500 mA, IR = 1A, IRR = 0.25A)
(IF = 10 A, dIF / dt = 100A/μs)
TA = 25C
TA = 100C
TA = 25C
TA = 100C
trr1
trr2
trr3
IRM3
trr4
IRM4
35
100
50
3.7
110
6
50
--
nsec
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