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參數(shù)資料
| 型號： | SDR529SMSTX |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 整流器 |
| 英文描述： | 3 A, 900 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, SMS, 2 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 115K |
| 代理商： | SDR529SMSTX |
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
SDR52 ___
___
└
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
│
└
Package Type
___ = Axial
SMS = Surface Mount Square
Tab
│
└
Voltage/Family
6 = 600V
7 = 700V
8 = 800V
9 = 900V
SDR526 thru SDR529
SDR526SMS thru SDR529SMS
3 AMPS
600 – 900 VOLTS
35 nsec
HYPER FAST
RECTIFIER
FEATURES:
Hyper Fast Recovery: 35 nsec maximum
PIV up to 900 Volts
Avalanche Breakdown
Hermetically Sealed
For High Efficiency High Voltage Applications
Single Chip Construction
Metallurgically Bonded
TX, TXV, and Space Level Screening
Available
2/
MAXIMUM RATINGS
Symbol
Value
Units
Peak Repetitive Reverse Voltage and
DC Blocking Voltage @ 50A
SDR526
SDR527
SDR528
SDR529
VRRM
VRWM
VR
600
700
800
900
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave, TA=25
oC)
IO
3
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, Superimposed on IO, allow junction to
reach equilibrium between pulses, TA=25
oC)
IFSM
75
Amps
Operating and Storage Temperature
TOP & Tstg
-65 to +175
oC
Maximum Thermal Resistance
Junction to Lead, L = 0.125” (Axial Lead)
Junction to End Tab (Surface Mount)
RθJL
RθJE
20
10
oC/W
Notes:
1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flow Available on Request.
Axial
Surface Mount
Square Tab (SMS)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0049E
DOC
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