參數(shù)資料
型號: SDR50U080NS
廠商: SOLID STATE DEVICES INC
元件分類: 參考電壓二極管
英文描述: 50 A, 800 V, SILICON, RECTIFIER DIODE, TO-258AA
封裝: HERMETIC SEALED, TO-258, 3 PIN
文件頁數(shù): 2/3頁
文件大小: 99K
代理商: SDR50U080NS
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0117E
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR50U080 thru SDR50U120
Series
Electrical Characteristics
Symbol
Typ
Max
Units
Instantaneous Forward Voltage Drop
(TA = 25C, 300 μsec pulse)
IF = 20Adc
IF = 50Adc
IF = 100Adc
VF1
1.60
1.75
1.90
--
1.9
2.3
Volts
Instantaneous Forward Voltage Drop
TA = -55C
TA = 100C
IF = 20Adc
IF = 50Adc
IF = 20Adc
IF = 50Adc
VF2
1.65
1.80
1.30
1.55
--
1.95
--
1.7
Volts
Reverse Leakage Current
(Rated VR, TA = 25C, 300 μsec pulse minimum)
IR1
50
100
μA
Reverse Leakage Current
(Rated VR, TA = 100C, 300 μsec pulse minimum)
(Rated VR, TA = 125C, 300 μsec pulse minimum)
(Rated VR, TA = 150C, 300 μsec pulse minimum)
IR2
2.50
8.0
23
10
--
mA
Junction Capacitance
(VR = 5 Vdc, TA = 25C, f = 1MHz)
(VR = 10 Vdc, TA = 25C, f = 1MHz)
CJ
95
90
--
150
pF
Reverse Recovery Time
(IF = 500 mA, IR = 1A, IRR = 0.25A)
(IF = 10 A, dIF /dt = 100A/us)
TA = 25C
TA = 100C
TA = 25C
TA = 100C
trr1
trr2
trr3
IRM3
trr4
IRM4
45
110
55
4.0
140
7.0
50
--
nsec
A
nsec
A
相關(guān)PDF資料
PDF描述
SDR50U080NTXV 50 A, 800 V, SILICON, RECTIFIER DIODE, TO-258AA
SDR50U080N 50 A, 800 V, SILICON, RECTIFIER DIODE, TO-258AA
SDR50U080PS 50 A, 800 V, SILICON, RECTIFIER DIODE, TO-259
SDR50U080P 50 A, 800 V, SILICON, RECTIFIER DIODE, TO-259
SDR50U090MS 50 A, 900 V, SILICON, RECTIFIER DIODE, TO-254AA
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