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參數(shù)資料
| 型號： | SDR429SMSTXV |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 1 A, 700 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, SMS, 2 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 212K |
| 代理商： | SDR429SMSTXV |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0008C
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR429
Electrical Characteristic
Symbol
Min
Typ
Max
Units
Instantaneous Forward Voltage Drop
(Tj = 25C, 300 sec pulse)
If = 1A
If = 3A
Vf1
Vf2
––
2.35
3.5
2.5
3.8
Volts
Instantaneous Forward Voltage Drop
(Tj = 100C, 300 sec pulse)
If = 1A
If = 3A
Vf3
Vf4
––
1.65
2.5
1.8
2.7
Volts
Instantaneous Forward Voltage Drop
(Tj = -55C, 300 sec pulse)
If = 1A
If = 3A
Vf5
Vf6
––
3.0
4.5
3.75
5.30
Volts
Reverse Leakage Current
(Vr = 700 V, Tj = 25C, 300 sec pulse)
Ir1
––
0.2
1.0
A
Reverse Leakage Current
(Vr = 700 V, Tj = 100C, 300 sec pulse)
Ir2
––
5.0
20
A
Reverse Recovery Time
(IF = 0.5A, IR = 1A, IRR = 0.25A)
TA = 25C
TA = 100C
tRR1
tRR2
––
17
32
20
35
nsec
Junction Capacitance
(Vr=10 Vdc, Tc=25C, f=1Mhz)
Cj
––
22
30
pF
Case Outline: (Axial)
B
C
A
D
DIM
MIN
MAX
A
0.
0
120”
.145”
B
0.
0
150”
.190”
C
0.
0
027”
.033”
D
1.
-
00”
-
Case Outline: (SMS)
C
B
A
D
DIM
MIN
MAX
A
0.
0
170”
.180”
B
0.
0
200”
.240”
C
0.
0
020”
.030”
D
0.
-
005”
-
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