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參數(shù)資料
| 型號： | SDR1PTXV |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 1 A, 1300 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED PACKAGE-2 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 147K |
| 代理商： | SDR1PTXV |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0001G
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
SDR1 __ __ __
└ Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
│
└ Package Type
__ = Axial Leaded
SMS = Surface Mount Square Tab
│
└
Family P = 1300 V
R = 1400 V
T = 1600 V
V = 1700 V
W = 1800 V
SDR1P thru SDR1W
and
SDR1PSMS and SDR1WSMS
1 AMP
1300 ─ 1900 VOLTS
70 nsec ULTRA FAST RECTIFIER
FEATURES:
Ultra Fast Recovery: 70 ns Max @ 25
°C 4/
Single Chip Construction
PIV to 1800 Volts
Low Reverse Leakage Current
Hermetically Sealed
For High Efficiency Applications
Available in Axial and Surface Mount Versions
Metallurgically Bonded
TX, TXV, and S-Level Screening Available
2/
MAXIMUM RATINGS 3/
RATING
SYMBOL
VALUE
UNIT
Peak Repetitive Reverse
Voltage
And
DC Blocking Voltage
SDR1P and SDR1PSMS
SDR1R and SDR1RSMS
SDR1S and SDR1SSMS
SDR1T and SDR1TSMS
SDR1V and SDR1VSMS
SDR1W and SDR1WSMS
VRRM
VRWM
VR
1300
1400
1500
1600
1700
1800
Volts
Rectified Forward Forward Current
(Resistive Load, 60 Hz, Sine Wave, TA = 25°C)
IO
1.0
Amp
Peak Surge Current
(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach
equilibrium between pulses, TA = 25°C)
IFSM
12
Amps
Operating & Storage Temperature
TOP and TSTG
-65 to +175
°
C
Thermal Resistance, Junction to Lead, L = 3/8” (Axial)
Junction to End Tab (SMS)
RθJL
RθJE
40
28
°
C/W
Axial Lead
SMS
NOTES:
1/ For Ordering Information, Price, and Availability- Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on
Request.
3/ Unless Otherwise Specified, All Electrical Characteristics @25C.
4/ Recovery Conditions: IF = 0.5 Amp, IR = 1.0 Amp, IRR to .25 Amp.
5/ For information on operating curves, contact factory.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SDR1WSMSS | 1 A, 1800 V, SILICON, SIGNAL DIODE |
| SDR1TSMSTXV | 1 A, 1600 V, SILICON, SIGNAL DIODE |
| SDR1RSMSS | 1 A, 1400 V, SILICON, SIGNAL DIODE |
| SDR1PSMSS | 1 A, 1300 V, SILICON, SIGNAL DIODE |
| SDR1PSMSTXV | 1 A, 1300 V, SILICON, SIGNAL DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SDR1R | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:ULTRA FAST RECTIFIER |
| SDR1RHF | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:HYPER FAST RECTIFIER |
| SDR1RSMS | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:1 AMP 1300 Α 1900 VOLTS 70 nsec ULTRA FAST RECTIFIER |
| SDR1S | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:1 AMP 1300 ─ 1900 VOLTS 70 nsec ULTRA FAST RECTIFIER |
| SDR1SHF | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:HYPER FAST RECTIFIER |
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