參數(shù)資料
型號(hào): SDR1MSMMTX
廠商: SOLID STATE DEVICES INC
元件分類: 參考電壓二極管
英文描述: 1 A, 1000 V, SILICON, SIGNAL DIODE
封裝: HERMETIC SEALED PACKAGE-2
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 235K
代理商: SDR1MSMMTX
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR1ASM, SMM, & SMS
thru
SDR1MSM, SMM, & SMS
ELECTRICAL CHARACTERISTICS 3/
Maximum Limit
Package
CHARACTERISTICS
SYMBOL
SMM
SM
SMS
UNIT
SDR1A .. thru SDR1D ..
0.96
1.3
0.96
SDR1G .. thru SDR1J ..
2.7
1.3
Instantaneous Forward Voltage Drop
(IF = 1Adc, 300 μs Pulse, TA = 25°C)
SDR1K .. thru SDR1M ..
VF1
2.7
2.5
1.9
Vdc
SDR1A .. thru SDR1D ..
1.05
1.45
2.1
SDR1G .. thru SDR1J ..
2.85
1.45
2.1
Instantaneous Forward Voltage Drop
(IF = 1Adc, 300 μs Pulse, TA = -55°C)
SDR1K .. thru SDR1M ..
VF2
2.85
2.65
2.3
Vdc
SDR1A .. thru SDR1D ..
SDR1G .. thru SDR1J ..
Reverse Leakage Current
(Rated VR, 300 μs Pulse Minimum , TA = 25°C)
SDR1K .. thru SDR1M ..
IR1
5
μA
SDR1A .. thru SDR1D ..
SDR1G .. thru SDR1J ..
Reverse Leakage Current
(Rated VR, 300 μs Pulse Minimum , TA = 100°C)
SDR1K .. thru SDR1M ..
IR2
250
μA
SDR1A .. thru SDR1D ..
20
15
40
SDR1G .. thru SDR1J ..
10
15
25
Junction Capacitance
(VR = 10Vdc, TA = 25°C , f = 1MHz)
SDR1K .. thru SDR1M ..
CJ
10
15
pf
SDR1A .. thru SDR1D ..
50
SDR1G .. thru SDR1J ..
60
Reverse Recovery Time 4/
SDR1K .. thru SDR1M ..
trr
70
ns
DIMENSIONS
DIM.
MIN. MAX.
DIM.
MIN.
MAX.
A
.095” .105”
A
.134” .153”
B
.190” .210”
B
.200” .280”
C
.010” .030”
C
.022” .028”
Round Tab Surface Mount (SM):
D
---
D
.002”
---
DIMENSIONS
DIM.
MIN. MAX.
A
.075” .085”
B
.135” .145”
C
.010” .030”
Mini (SMM):
D
---
Square Tab Surface Mount (SMS) :
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0003E
DOC
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