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參數(shù)資料
| 型號： | SDR1DTXV |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 1 A, 200 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED PACKAGE-2 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 146K |
| 代理商： | SDR1DTXV |
ELECTRICAL CHARACTERISTICS 3/
CHARACTERISTICS
SYMBOL VALUE
UNIT
Instantaneous Forward Voltage Drop
(IF = 1Adc, 300- 500 μs Pulse, TA = 25C)
SDR1D thru SDR1J
SDR1K thru SDR1N
VF1
1.70
1.90
Vdc
Instantaneous Forward Voltage Drop
(IF = 1Adc, 300- 500 μs Pulse, TA = -55C)
SDR1D thru SDR1J
SDR1K thru SDR1N
VF2
2.10
2.30
Vdc
Maximum Reverse Leakage Current
(Rated VR, 300 μs Pulse Minimum , TA = 25C)
IR1
5
μA
Maximum Reverse Leakage Current
(Rated VR, 300 μs Pulse Minimum , TA = 100C)
IR2
500
μA
Junction Capacitance
(VR = 10Vdc, TA = 25C , f = 1MHz)
CJ
24
pf
Maximum Reverse Recovery Time 4/
SDR1D thru SDR1J
SDR1K
SDR1M
SDR1N
trr
50
60
70
80
ns
Axial Leaded Case Outline 5/:
DIMENSIONS
DIM.
MIN.
MAX.
A
---
.150”
B
---
.190”
C
.027”
.033”
D
.95”
---
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR1D
thru
SDR1N
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0005H
DOC
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