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參數(shù)資料
| 型號： | SDA116MDB |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 橋式整流 |
| 英文描述： | 3 PHASE, 25 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封裝： | 1.500 X 0.875 INCH, 0.310 INCH HEIGHT, HERMETIC SEALED PACKAGE-5 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 41K |
| 代理商： | SDA116MDB |
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SDA116 __ __ __
+ Lead Bend
3/ __ = Straight Leads
UB = Up Bend
DB = Down Bend
+
Terminals
2/ 3/
L = Copper Leads
_ = Turret Terminals
+ Voltage
J = 600 V
K = 800 V
M = 1000 V
SDA116 Series
25A / 1000V
THREE PHASE BRIDGE
RECTIFIER ASSEMBLY
ULTRA FAST – 70 ns
Features:
Higher Blocking Voltage Available. Contact Factory.
Average Output Current 25 Amps
Low Reverse Leakage Current
Constructed with Void-free, Hermetically Sealed Discretes
Aluminum Case for Maximum Thermal Conductivity
Small Package Size (1.500 x 0.875 x 0.310”)
TX and TXV & S Level Screening Available
Standard, Fast, & Hyper Fast Versions Available.
Contact Factory.
Maximum Ratings
Symbol
Value
Units
Peak Repetitive and Peak Surge Reverse Voltage
SDA116J
SDA116K
SDA116M
VRRM
VRSM
VR
600
800
1000
Volts
Average Rectified Forward Current
4/
(Resistive Load, 60 Hz Sine Wave)
TC = 55°C
Io
25
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C, per leg)
IFSM
125
Amps
Operating & Storage Temperature
Top & Tstg
-55 to +150
C
Maximum Thermal Resistance, Junction to Case
RθJC
2.5
C/W
11
SDA116 ( L )
SDA116 (_)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RA0046A
DOC
Lead Dia = .050”
Lead Length = 0.5” min
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