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參數(shù)資料
| 型號： | SD6100CS |
| 廠商： | PanJit International Inc. |
| 英文描述： | DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes) |
| 中文描述： | DPAK封裝表面貼裝肖特基整流（電壓- 20至100伏特，電流-六點〇安培） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 45K |
| 代理商： | SD6100CS |
SD620CS – SD6100CS
1 of 3 2002 Won-Top Electronics
SD620CS – SD6100CS
6.0A DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Features
!
Schottky Barrier Chip A C
!
Guard Ring Die Construction for B J
Transient Protection D
!
High Current Capability
!
Low Power Loss, High Efficiency
!
High Surge Current Capability E
!
For Use in Low Voltage, High Frequency K
Inverters, Free Wheeling, and Polarity G
Protection Applications H
L
P P
Mechanical Data
!
Case: Molded Plastic
!
Terminals: Plated Leads Solderable per
MIL-STD-750, Method 2026
!
Polarity: Cathode Band
PIN 1 - +
!
Weight: 0.4 grams (approx.)
PIN 3 - Case PIN 2
!
Mounting Position: Any
Potive CT
!
Marking: Type Number
!
Standard Packaging: 16mm Tape (EIA-481)
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol
SD
620CS
SD
630CS
SD
640CS
SD
650CS
SD
660CS
SD
680CS
SD
6100CS
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20
30
40
50
60
80
100
V
RMS Reverse Voltage
V
R(RMS)
14
21
28
35
42
56
70
V
Average Rectified Output Current @T
L
= 75°C
I
O
6.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
75
A
Forward Voltage (Note 1) @I
F
= 3.0A
V
FM
0.55
0.70
0.85
V
Peak Reverse Current @T
A
= 25°C
At Rated DC Blocking Voltage @T
A
= 100°C
I
RM
0.2
15
mA
Typical Junction Capacitance (Note 2)
C
j
400
pF
Typical Thermal Resistance Junction to Ambient
R
JA
80
K/W
Operating Temperature Range
T
j
-50 to +125
°C
Storage Temperature Range
T
STG
-50 to +150
°C
Note: 1. Mounted on P.C. Board with 14mm
2
(0.13mm thick) copper pad.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
WTE
POWER SEMICONDUCTORS
D PAK/TO-252AA
Min
6.4
5.0
2.35
—
5.3
2.3
0.4
0.4
0.3
0.50 Typical
—
All Dimensions in mm
Dim
A
B
C
D
E
G
H
J
K
L
P
Max
6.8
5.4
2.75
1.60
5.7
2.7
0.8
0.6
0.7
2.3
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