參數(shù)資料
型號(hào): SD600R32PC
廠商: VISHAY INTERTECHNOLOGY INC
元件分類: 整流器
英文描述: 600 A, 3200 V, SILICON, RECTIFIER DIODE
封裝: ROHS COMPLIANT, CERAMIC, B-8, 1 PIN
文件頁數(shù): 5/9頁
文件大小: 194K
代理商: SD600R32PC
Document Number: 93551
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 17-Apr-08
5
SD600N/R Series
Standard Recovery Diodes
(Stud Version), 600 A
Vishay High Power Products
Fig. 8 - Forward Power Loss Characteristics
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 10 - Maximum Non-Repetitive Surge Current
Fig. 11 - Maximum Non-Repetitive Surge Current
Fig. 12 - Maximum Non-Repetitive Surge Current
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
1 K/W
R
=
0.0
2
K/ W
- D
elta
R
th
SA
0.0
4 K
/ W
0.0
6 K
/ W
0.1
K/ W
0.2 K
/ W
0.4 K/ W
0
100
200
300
400
500
600
700
800
900
1000
1100
0
100 200 300 400 500 600 700 800 900
DC
180°
120°
90°
60°
30°
RMSLimit
Conduction Period
M
a
x
imu
m
A
v
e
ra
g
e
F
o
rw
a
rd
P
o
w
e
r
Lo
ss
(
W
)
Average Forward Current (A)
SD600N/ RSeries
(2500V to 3200V)
T = 150°C
J
2000
4000
6000
8000
10000
12000
110
100
Number Of Equal Amplitude Ha lf Cyc le Current Pulses (N)
P
e
ak
H
a
lf
S
in
e
W
a
v
e
F
o
rw
ar
d
C
u
rr
e
n
t(
A
)
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
Initial T = 180°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
SD600N/ RSeries
(400V to 2000V)
2000
4000
6000
8000
10000
12000
14000
0.01
0.1
1
Pulse Train Duration (s)
Pe
a
k
Ha
lf
S
in
e
W
a
v
e
F
o
rw
a
rd
C
u
rr
e
n
t(
A
)
Maximum Non Repetitive Surge Current
VersusPulse Train Duration.
Initial T = 180 °C
No Voltag e Reapp lied
Rated V
Reapplied
RRM
J
SD600N/ RSeries
(400V to 2000V)
2000
4000
6000
8000
10000
110
100
Number Of Eq ual Amplitude Half Cycle Current Pulses (N)
P
e
ak
H
a
lf
S
in
e
W
a
v
e
F
o
rw
ar
d
C
u
rr
e
n
t
(A
)
Initial T = 150°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
SD600N/ RSeries
(2500V to 3200V)
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
2000
4000
6000
8000
10000
12000
0.01
0.1
1
Pulse Train Duration (s)
P
e
a
k
H
a
lf
S
in
e
W
a
v
e
F
o
rw
ar
d
C
u
rr
e
n
t(
A
)
Initial T = 150 °C
No Voltage Reapplied
Rated V
Reapplied
J
RRM
VersusPulse Train Duration.
SD600N/ RSeries
(2500V to 3200V)
Maximum Non Repetitive Surge Current
相關(guān)PDF資料
PDF描述
SD600N16MC 600 A, 1600 V, SILICON, RECTIFIER DIODE
SD600N25PC 600 A, 2500 V, SILICON, RECTIFIER DIODE
SD500R04PCPBF 600 A, 400 V, SILICON, RECTIFIER DIODE
SD500R12PCPBF 600 A, 1200 V, SILICON, RECTIFIER DIODE
SD500R08PC 600 A, 800 V, SILICON, RECTIFIER DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SD601-526-0850Y 制造商:VITESSE 制造商全稱:Vitesse Semiconductor Corporation 功能描述:TYPE N BULKHEAD JACK
SD601-526-1410Y 制造商:VITESSE 制造商全稱:Vitesse Semiconductor Corporation 功能描述:TYPE N BULKHEAD JACK
SD6020-100-R 功能描述:固定電感器 10uH 1.2A 103.3mOhms RoHS:否 制造商:AVX 電感:10 uH 容差:20 % 最大直流電流:1 A 最大直流電阻:0.075 Ohms 工作溫度范圍:- 40 C to + 85 C 自諧振頻率:38 MHz Q 最小值:40 尺寸:4.45 mm W x 6.6 mm L x 2.92 mm H 屏蔽:Shielded 端接類型:SMD/SMT 封裝 / 箱體:6.6 mm x 4.45 mm
SD6020-101-R 功能描述:固定電感器 100uH 0.36A 1.0ohms RoHS:否 制造商:AVX 電感:10 uH 容差:20 % 最大直流電流:1 A 最大直流電阻:0.075 Ohms 工作溫度范圍:- 40 C to + 85 C 自諧振頻率:38 MHz Q 最小值:40 尺寸:4.45 mm W x 6.6 mm L x 2.92 mm H 屏蔽:Shielded 端接類型:SMD/SMT 封裝 / 箱體:6.6 mm x 4.45 mm
SD6020-120-R 功能描述:固定電感器 12uH 1.1A 115mOhms RoHS:否 制造商:AVX 電感:10 uH 容差:20 % 最大直流電流:1 A 最大直流電阻:0.075 Ohms 工作溫度范圍:- 40 C to + 85 C 自諧振頻率:38 MHz Q 最小值:40 尺寸:4.45 mm W x 6.6 mm L x 2.92 mm H 屏蔽:Shielded 端接類型:SMD/SMT 封裝 / 箱體:6.6 mm x 4.45 mm