參數(shù)資料
型號: SD57030-01
廠商: 意法半導(dǎo)體
英文描述: RF POWER TRANSISTORS The LdmoSTFAMILY
中文描述: 射頻功率晶體管LdmoSTFAMILY
文件頁數(shù): 1/7頁
文件大?。?/td> 262K
代理商: SD57030-01
1/7
March, 24 2003
SD57030
RF POWER TRANSISTORS
The LdmoSTFAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
OUT
= 30 W WITH 13 dB gain @ 945 MHz
BeO FREE PACKAGE
DESCRIPTION
The SD57030 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The SD57030 is designed for high gain and
broadband performance operating in common
source mode at 28 V. It is ideal for base station
applications requiring high linearity.
PIN CONNECTION
1
3
2
1. Drain
2. Gate
3. Source
M243
(Epoxy Sealed)
ORDER CODE
SD57030
BRANDING
TSD57030
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
°
C)
Symbol
V
(BR)DSS
Drain-Source Voltage
V
DGR
Drain-Gate Voltage (R
GS
= 1 M
)
V
GS
Gate-Source Voltage
I
D
Drain Current
P
DISS
Power Dissipation (@ Tc = 70
°
C)
Tj
Max. Operating Junction Temperature
T
STG
Storage Temperature
Parameter
Value
Unit
65
V
65
V
+
20
V
4
A
74
W
200
°
C
-65 to + 200
°
C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
1.75
°
C/W
相關(guān)PDF資料
PDF描述
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