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參數(shù)資料
| 型號(hào)： | SD553C40S50L |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | 整流器 |
| 英文描述： | 560 A, 4000 V, SILICON, RECTIFIER DIODE, DO-200AB |
| 封裝： | BPUK-2 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 151K |
| 代理商： | SD553C40S50L |
SD553C..S50L Series
2
Bulletin I2092 rev. C 04/00
www.irf.com
Voltage
V
RRM
, maximum repetitive
V
RSM
, maximum non-
I
RRM
max.
Type number
Code
peak reverse voltage
repetitive peak rev. voltage
@ T
J
= 125°C
VV
mA
30
3000
3100
36
3600
3700
40
4000
4100
45
4500
4600
ELECTRICAL SPECIFICATIONS
Voltage Ratings
SD553C..S50L
75
Test conditions
Max. values @ T
J
= 125 °C
Code
(
s)
(A)
(A/
s)
(V)
(
s)
(
C)
(A)
Recovery Characteristics
S50
5.0
1000
100
- 50
6.0
900
250
Typical t
rr
I
pk
di/dt
V
r
t
rr
Q
rr
I
rr
@ 25% I
RRM
Square Pulse
@ 25% I
RRM
T
J = 25
oC
I
F(AV)
Max. average forward current
560 (210)
A
180° conduction, half sine wave
@ Heatsink temperature
55 (85)
°C
Double side (single side) cooled
I
F(RMS)
Max. RMS forward current
1120
A
@ 25°C heatsink temperature double side cooled
I
FSM
Max. peak, one-cycle forward,
12000
t = 10ms
No voltage
non-repetitive surge current
12570
t = 8.3ms
reapplied
10100
t = 10ms
50% V
RRM
10570
t = 8.3ms
reapplied
Sinusoidal half wave,
I2 t
Maximum I2t for fusing
721
t = 10ms
No voltage
Initial T
J
= T
J
max.
658
t = 8.3ms
reapplied
510
t = 10ms
50% V
RRM
466
t = 8.3ms
reapplied
I2
√t
Maximum I2
√t for fusing
7210
KA2
√s t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1 Low level value of threshold
voltage
V
F(TO)2 High level value of threshold
voltage
r
f1
Low level value of forward
slope resistance
r
f2
High level value of forward
slope resistance
V
FM
Max. forward voltage drop
3.24
V
I
pk
= 1500A, T
J = 125°C, t
p
= 10ms sinusoidal wave
Parameter
SD553C..S50L
Units
Conditions
Forward Conduction
KA2s
A
V
m
0.89
(I >
π x I
F(AV)
),T
J
= T
J
max.
0.98
(16.7% x
π x I
F(AV)
< I <
π x I
F(AV)
), T
J
= T
J
max.
1.95
(I >
π x I
F(AV)
),T
J
= T
J
max.
1.77
(16.7% x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ max.
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參數(shù)描述 |
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