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參數(shù)資料
| 型號(hào)： | SD543-52-07-390 |
| 元件分類(lèi)： | 光敏二極管 |
| 英文描述： | PHOTO DIODE |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 154K |
| 代理商： | SD543-52-07-390 |
Photodiode Arrays
Specifications
Part Number
Number of
Elements
Element Dimensions
Pitch
Responsivity
Shunt1
Resistance
Dark Current1
@ 10V
Capacitance
@ 0V
Uniformity2
NEP3
.
(mm)
(min)
(A/W)
(min)
(M-Ohm)
(max)
(nA)
(max)
(pF)
(typ)
(%)
(typ)
(W/
√ Hz)
SD 058-51-02-395
4
0.635 x 0.648
0.673
0.5 @ 900nm
500
0.8
10
± 5
1.4x10-14
SD 219-51-03-301
12
0.965 x 2.01
1.01
0.35 @ 633nm
200
2.7
40
± 5
2.0x10-14
SD 294-52-04-390
16
1.00 x 1.78
1.57
0.28 @ 540nm
250
0.5
200
± 5
3.2x10-14
SD 484-52-05-301
32
0.508 x 5.89
0.635
0.10 @ 365nm
0.22 @ 500nm
0.33 @ 700nm
50
N/A
500
± 5
5.2x10-14
SD 543-52-07-390
76
0.280 x 6.35
0.310
0.30 @ 500nm
0.50 @ 900nm
250
0.8
200
± 7.5
1.0x10-14
All specifications are per element.
1.Dark Current and Shunt Resistance vary with temperature as follows: for T>23° C, ID=1.09 TID23,
RSH=0.9 TRSH23 and for T<23° C, ID=ID23/1.09 T, RSH=RSH23/0.9 T, where T is the temperature
difference from 23° C, and ID23 and RSH23 are the dark current and shunt resistance at 23° C.
2.Element to element responsivity uniformity is measured at the longest wavelength specified for
responsivity of each part.
3.Test conditions are VB=10mV and highest responsivity value listed in the table.
Arrays
file:///D|/WEB SITES/API/TMPkp44sgkvmg.htm (1 of 4) [7/16/2001 11:06:32 AM]
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SD-543-GT | 制造商:Bud Industries Inc 功能描述: |
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| SD5443-001 | 功能描述:光電晶體管 INFRARED SENSORS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| SD5443-002 | 功能描述:光電晶體管 Silicon PhotoTrans TO-46 Mtl/Gls LnsdPk RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
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