- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄40112 > SD453N16S20PSC (VISHAY INTERTECHNOLOGY INC) 400 A, 1600 V, SILICON, RECTIFIER DIODE PDF資料下載
參數(shù)資料
| 型號(hào)： | SD453N16S20PSC |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 整流器 |
| 英文描述： | 400 A, 1600 V, SILICON, RECTIFIER DIODE |
| 封裝： | ROHS COMPLIANT, CERAMIC, B-8, 1 PIN |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 395K |
| 代理商： | SD453N16S20PSC |
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 93176
2
Revision: 08-Apr-08
SD453N/R Series
Vishay High Power Products
Fast Recovery Diodes
(Stud Version), 400/450 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
SD453N/R
UNITS
S20
S30
Maximum average forward current
at case temperature
IF(AV)
180° conduction, half sine wave
400
450
A
70
°C
Maximum RMS forward current at
case temperature
IF(RMS)
630
710
A
55
52
°C
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
9300
9600
A
t = 8.3 ms
9730
10 050
t = 10 ms
100 % VRRM
reapplied
7820
8070
t = 8.3 ms
8190
8450
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
432
460
kA2s
t = 8.3 ms
395
420
t = 10 ms
100 % VRRM
reapplied
306
326
t = 8.3 ms
279
297
Maximum I2
√t for fusing
I2
√t
t = 0.1 to 10 ms, no voltage reapplied
4320
4600
kA2
√s
Low level value of threshold voltage
VF(TO)1
(16.7 % x
π x I
F(AV) < I < π x IF(AV)),
TJ = TJ maximum
1.00
0.95
V
High level value of threshold voltage
VF(TO)2
(I >
π x I
F(AV)), TJ = TJ maximum
1.09
1.04
Low level value of forward
slope resistance
rf1
(16.7 % x
π x I
F(AV) < I < π x IF(AV)),
TJ = TJ maximum
0.80
0.60
m
Ω
High level value of forward
slope resistance
rf2
(I >
π x I
F(AV)), TJ = TJ maximum
0.74
0.54
Maximum forward voltage drop
VFM
Ipk = 1500 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave
2.20
1.85
V
RECOVERY CHARACTERISTICS
CODE
MAXIMUM VALUE
AT TJ = 25 °C
TEST CONDITIONS
TYPICAL VALUES
AT TJ = 150 °C
trr AT 25 % IRRM
(s)
Ipk
SQUARE
PULSE
(A)
dI/dt
(A/s)
Vr
(V)
trr AT 25 % IRRM
(s)
Qrr
(C)
Irr
(A)
S20
2.0
1000
50
- 50
3.5
250
120
S30
3.0
5.0
380
150
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating and
storage temperature range
TJ, TStg
- 40 to 150
°C
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.1
K/W
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.04
Mounting torque ± 10 %
Not-lubricated threads
50
Nm
Approximate weight
454
g
Case style
See dimensions (link at the end of datasheet)
B-8
I
FM
t
rr
dir
dt
I
RM(REC)
Q
rr
t
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SD453R20S20MTC | 400 A, 2000 V, SILICON, RECTIFIER DIODE |
| SD453N16S20PC | 400 A, 1600 V, SILICON, RECTIFIER DIODE |
| SD453N16S30MTC | 450 A, 1600 V, SILICON, RECTIFIER DIODE |
| SD453R25S20PSC | 400 A, 2500 V, SILICON, RECTIFIER DIODE |
| SD453N16S20MSC | 400 A, 1600 V, SILICON, RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SD453N16S20PTC | 制造商:IRF 制造商全稱:International Rectifier 功能描述:FAST RECOVERY DIODES |
| SD453N16S30MC | 制造商:IRF 制造商全稱:International Rectifier 功能描述:FAST RECOVERY DIODES |
| SD453N16S30MSC | 制造商:IRF 制造商全稱:International Rectifier 功能描述:FAST RECOVERY DIODES |
| SD453N16S30MTC | 制造商:IRF 制造商全稱:International Rectifier 功能描述:FAST RECOVERY DIODES |
| SD453N16S30PC | 功能描述:DIODE FAST REC 1600V 450A B-8 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 單二極管/整流器 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 二極管類型:標(biāo)準(zhǔn) 電壓 - (Vr)（最大）:50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時(shí)為正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時(shí)間(trr):300ns 電流 - 在 Vr 時(shí)反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座，接線柱安裝 封裝/外殼:DO-203AA，DO-4，接線柱 供應(yīng)商設(shè)備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。