參數(shù)資料
型號(hào)： SD453N12S20MSC
廠商： VISHAY INTERTECHNOLOGY INC
元件分類： 整流器
英文描述： 400 A, 1200 V, SILICON, RECTIFIER DIODE
封裝： ROHS COMPLIANT, CERAMIC, B-8, 1 PIN
文件頁(yè)數(shù)： 7/10頁(yè)
文件大小： 395K
代理商： SD453N12S20MSC
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 93176
6
Revision: 08-Apr-08
SD453N/R Series
Vishay High Power Products
Fast Recovery Diodes
(Stud Version), 400/450 A
Fig. 16 - Typical Forward Recovery Characteristics
Fig. 17 - Typical Forward Recovery Characteristics
Fig. 18 - Recovery Time Characteristics
Fig. 19 - Recovery Charge Characteristics
Fig. 20 - Recovery Current Characteristics
Fig. 21 - Recovery Time Characteristics
0
20
40
60
80
100
0
400
800
1200
1600
2000
T = 25°C
J
F
o
rw
a
rd
R
e
c
o
v
e
ry
(V
)
T = 150°C
J
SD453N/ R..S20 Series
Rate Of Rise Of Forward Current - di/ dt (A/ us)
I
V
FP
0
20
40
60
80
100
0
400
800
120016002000
T = 25°C
J
F
o
rw
a
rd
R
e
c
o
v
e
ry
(V
)
T = 150°C
J
SD453N/ R..S30 Series
Rate Of Rise Of Forward Current - di/ dt (A/ us)
I
V
FP
2
2.5
3
3.5
4
4.5
5
5.5
6
10
100
1000
Rate Of Fa ll Of Forward Current - di/ d t (A/ s)
Ma
x
im
u
m
R
e
ve
rs
e
R
e
c
o
ve
ry
T
im
e
-T
rr
(
s)
500 A
150 A
I
= 1000 A
Sine Pulse
FM
SD453N/ R..S20 Series
T = 150 °C; V > 100V
J
r
0
100
200
300
400
500
600
700
800
0
50
100 150 200 250 300
Ma
xi
mu
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
h
a
rg
e
-
Q
rr
(
C
)
Ra te Of Fa ll Of Forward Current - di/ d t (A/ s)
500 A
150 A
I
= 1000 A
Sine Pulse
FM
SD453N/ R..S20 Series
T = 150 °C; V > 100V
J
r
0
50
100
150
200
250
300
350
400
450
0
50 100 150 200 250 300
Ma
x
imu
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
u
rr
e
n
t
-
Ir
r(
A
)
500 A
Rate Of Fall Of Forwa rd Current - di/ dt (A/ s)
150 A
I
= 1000 A
Sine Pulse
FM
SD453N/ R..S20 Series
T = 150 °C; V > 100V
J
r
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
10
100
1000
Rate Of Fa ll Of Forward Current - di/ d t (A/ s)
Ma
x
imu
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
Ti
me
-
T
rr
(
s)
500 A
150 A
I
= 1000 A
Sine Pulse
FM
SD453N/ R..S30 Series
T = 150 °C, V > 100V
J
r
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