參數(shù)資料
型號(hào)： SD300C32C
廠商： VISHAY INTERTECHNOLOGY INC
元件分類： 整流器
英文描述： 540 A, 3200 V, SILICON, RECTIFIER DIODE, DO-200AA
封裝： ROHS COMPLIANT, CERAMIC, PUK-2
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 144K
代理商： SD300C32C
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 93544
2
Revision: 14-May-08
SD300C..C Series
Vishay High Power Products Standard Recovery Diodes
(Hockey PUK Version), 650 A
Note
The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
SD300C..C
UNITS
04 TO 20
25 TO 32
Maximum average forward current
at heatsink temperature
IF(AV)
180° conduction, half sine wave
Double side (single side) cooled
650 (380) 540 (250)
A
55 (85)
°C
Maximum RMS forward current
IF(RMS)
25 °C heatsink temperature double side cooled
1150
995
A
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
6050
t = 8.3 ms
6335
t = 10 ms
100 % VRRM
reapplied
5090
t = 8.3 ms
5330
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
183
kA2s
t = 8.3 ms
167
t = 10 ms
100 % VRRM
reapplied
129
t = 8.3 ms
118
Maximum I2
√t for fusing
I2
√t
t = 0.1 to 10 ms, no voltage reapplied
1830
kA2
√s
Low level value of threshold voltage
VF(TO)1
(16.7 % x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ maximum
0.95
V
High level value of threshold voltage
VF(TO)2
(I >
π x I
F(AV)), TJ = TJ maximum
1.00
Low level values of forward
slope resistance
rf1
(16.7 % x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ maximum
0.75
m
Ω
High level values of forward
slope resistance
rf2
(I >
π x I
F(AV)), TJ = TJ maximum
0.72
Maximum forward voltage drop
VFM
Ipk = 1500 A, TJ = TJ maximum;
tp = 10 ms sinusoidal wave
2.08
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
SD300C..C
UNITS
04 TO 20
25 TO 32
Maximum operating temperature range
TJ
- 40 to 180 - 40 to 150
°C
Maximum storage temperature range
TStg
- 55 to 200
Maximum thermal resistance,
junction to heatsink
RthJ-hs
DC operation single side cooled
0.163
K/W
DC operation double side cooled
0.073
Mounting force, ± 10 %
4900 (500)
N (kg)
Approximate weight
70
g
Case style
See dimensions - link at the end of datasheet
DO-200AA
ΔR
thJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180°
0.017
0.011
0.012
TJ = TJ maximum
K/W
120°
0.020
90°
0.025
0.027
60°
0.036
0.038
30°
0.064
0.062
0.065
0.062
相關(guān)PDF資料
PDF描述
SD300C12C 650 A, 1200 V, SILICON, RECTIFIER DIODE, DO-200AA
SD300N04MCPBF 380 A, 400 V, SILICON, RECTIFIER DIODE, DO-205AB
SD300N04PSCPBF 380 A, 400 V, SILICON, RECTIFIER DIODE, DO-205AB
SD300N08MBCPBF 380 A, 800 V, SILICON, RECTIFIER DIODE, DO-205AB
SD300N12MBVPBF 380 A, 1200 V, SILICON, RECTIFIER DIODE, DO-205AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SD300N 制造商:IRF 制造商全稱:International Rectifier 功能描述:STANDARD RECOVERY DIODES Stud Version
SD300N02PC 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:Standard Recovery
SD300N04PC 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:Standard Recovery
SD300N04PV 制造商:n/a 功能描述:Power Semiconductor
SD300N06PC 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:Standard Recovery
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*