- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄40107 > SD263C45S50L (VISHAY INTERTECHNOLOGY INC) 375 A, 4500 V, SILICON, RECTIFIER DIODE, DO-200AB PDF資料下載
參數(shù)資料
| 型號： | SD263C45S50L |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 整流器 |
| 英文描述： | 375 A, 4500 V, SILICON, RECTIFIER DIODE, DO-200AB |
| 封裝： | ROHS COMPLIANT, CERAMIC, BPUK-2 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 210K |
| 代理商： | SD263C45S50L |
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 93173
2
Revision: 14-May-08
SD263C..S50L Series
Vishay High Power Products
Fast Recovery Diodes
(Hockey PUK Version), 375 A
Note
(1) dI/dt = 25 A/s, TJ = 25 °C
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
at heatsink temperature
IF(AV)
180° conduction, half sine wave
Double side (single side) cooled
375 (150)
A
55 (85)
°C
Maximum RMS forward current
IF(RMS)
25 °C heatsink temperature double side cooled
725
A
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
5500
t = 8.3 ms
5760
t = 10 ms
50 % VRRM
reapplied
4630
t = 8.3 ms
4850
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
151
kA2s
t = 8.3 ms
138
t = 10 ms
50 % VRRM
reapplied
107
t = 8.3 ms
98
Maximum I2
√t for fusing
I2
√t
t = 0.1 to 10 ms, no voltage reapplied
1510
kA2
√s
Low level value of threshold voltage
VF(TO)1
(16.7 % x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ maximum
1.56
V
High level value of threshold voltage
VF(TO)2
(I >
π x I
F(AV)), TJ = TJ maximum
1.71
Low level value of forward
slope resistance
rf1
(16.7 % x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ maximum
1.64
m
Ω
High level value of forward
slope resistance
rf2
(I >
π x I
F(AV)), TJ = TJ maximum
1.53
Maximum forward voltage drop
VFM
Ipk = 1000 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave
3.20
V
RECOVERY CHARACTERISTICS
CODE
MAXIMUM VALUE
AT TJ = 25 °C
TEST CONDITIONS
TYPICAL VALUES
AT TJ = 150 °C
trr AT 25 % IRRM
(s)
Ipk
SQUARE
PULSE
(A)
dI/dt (1)
(A/s)
Vr
(V)
trr AT 25 % IRRM
(s)
Qrr
(C)
Irr
(A)
S50
5.0
1000
100
- 50
4.5
680
240
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating
temperature range
TJ
- 40 to 125
°C
Maximum storage temperature range
TStg
- 40 to 150
Maximum thermal resistance,
junction to heatsink
RthJ-hs
DC operation single side cooled
0.11
K/W
DC operation double side cooled
0.05
Mounting force, ± 10 %
9800 (1000)
N (kg)
Approximate weight
230
g
Case style
See dimensions - link at the end of datasheet
DO-200AB (B-PUK)
I
FM
t
rr
dir
dt
I
RM(REC)
Q
rr
t
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SD3000C04K | 3800 A, 400 V, SILICON, RECTIFIER DIODE, DO-200AC |
| SD300C12CPBF | 650 A, 1200 V, SILICON, RECTIFIER DIODE, DO-200AA |
| SD300C25CPBF | 540 A, 2500 V, SILICON, RECTIFIER DIODE, DO-200AA |
| SD300C32CPBF | 540 A, 3200 V, SILICON, RECTIFIER DIODE, DO-200AA |
| SD300C12C | 650 A, 1200 V, SILICON, RECTIFIER DIODE, DO-200AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SD27 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| SD270 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| SD270225SS | 制造商:C&K Components 功能描述:DOME SWITCH - Tape and Reel |
| SD2716 WAF | 制造商:Intel 功能描述: |
| SD2716(D)4-M DIE | 制造商:Intel 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。