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參數(shù)資料
| 型號： | SD241P-E3/45 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 30 A, 45 V, SILICON, RECTIFIER DIODE, TO-247AD |
| 封裝： | ROHS COMPLIANT, PLASTIC, TO-3P, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 86K |
| 代理商： | SD241P-E3/45 |
SD241P
Vishay General Semiconductor
Document Number: 88738
Revision: 07-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Schottky Rectifier
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case:
TO-247AD (TO-3P)
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
30 A
45 V
400 A
0.47 V
150 °C
PIN 1
PIN 3
CASE
PIN 2
TO-247AD (TO-3P)
1
2
3
Note:
(1) 2.0 μs pulse width, f = 1.0 kHz
Note:
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SD241P
UNIT
Maximum repetitive peak reverse voltage at T
C
= 25 °C
Maximum blocking voltage at T
C
= 25 °C
Maximum working peak reverse voltage
V
RRM
V
DC
V
RWM
I
F(AV)
45
V
45
V
35
V
Maximum average forward rectified current at T
C
= 105 °C
Peak forward surge current, 8.3 ms single half sine-wave superimposed
on rated load per diode
Peak repetitive reverse surge current per diode
(1)
30
A
I
FSM
400
A
I
RSM
dV/dt
2.0
A
Voltage rate of change at V
R
= 35 V
Operating junction temperature range
10 000
V/μs
T
J
T
STG
- 65 to + 150
°C
Storage temperature range
- 65 to + 175
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SD241P
UNIT
Maximum instantaneous forward voltage per diode
(1)
I
F
= 10 A
I
F
= 20 A
T
C
= 125 °C
T
C
= 125 °C
V
F
0.47
0.60
V
Maximum instantaneous reverse current reverse
voltage per diode
(1)
V
R
= 35 V
T
C
= 25 °C
T
C
= 125 °C
I
R
1.0
100
mA
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