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參數(shù)資料
| 型號(hào)： | SD211T |
| 廠商： | Linear Integrated Systems |
| 英文描述： | AB 10C 10#16 SKT PLUG |
| 中文描述： | N溝道場(chǎng)效應(yīng)開關(guān)橫向DMOS的典型特征 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 29K |
| 代理商： | SD211T |
ABSOLUTE MAXIMUM RATINGS
Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation at 25
o
C Case Temperature . . . 1.2W
Storage Temperatue Range . . . . . . . . . . . . . -65
o
C to +200
o
C
Lead Temperature (1/16" from case for 10 sec.). . . . . . 300
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +125
o
C
SD211 /SD213 /SD215
C ORPORATION
DC CHARACTERISTICS
(T
A
= 25
o
C, unless otherwise specified)
SYMBOL
PARAMETER
SD211
SD213
SD215
UNITS
TEST CONDITIONS
MIN
TYP MAX MIN
TYP MAX MIN
TYP MAX
BREAKDOWN VOLTAGE
BV
DS
Drain-to-Source
30
35
V
V
GS
= V
BS
= 0V, I
D
= 10
μ
A
10
25
10
25
20
25
V
GS
= V
BS
= -5V, I
S
= 10nA
BV
SD
Source-to Drain
10
10
20
V
GD
= V
BD
= -5V, I
D
= 10nA
BV
DB
Drain-to-Body
15
15
25
V
GB
= 0V, source OPEN, I
D
= 10nA
BV
SB
Source-to-Body
15
15
25
V
GB
= 0V, drain OPEN, I
S
= 10
μ
A
LEAKAGE CURRENT
I
DS
(OFF)
Drain-to-Source
1
10
1
10
nA
V
GS
= V
BS
= -5V, V
DS
= +10V
1
10
V
GS
= V
BS
= -5V, V
DS
= +20V
I
SD
(OFF)
Source-to-Drain
1
10
1
10
V
GS
= V
BD
= -5V, V
SD
= +10V
1
10
V
GS
= V
BD
= -5V, V
SD
= +20V
I
GBS
Gate
10
10
10
V
DB
= V
SB
= 0V, V
GS
=
±
40V
V
T
Threshold Voltage
0.5
1.0
2.0
0.1
1.0
2.0
0.1
1.0
2.0
V
V
DS
= V
GS
= V
T
, I
S
= 1
μ
A, V
SB
= 0V
r
DS
(ON)
Drain-to-Source
Resistance
50
70
50
70
50
70
I
D
= 1.0mA, V
SB
= 0, V
GS
= +5V
30
45
30
45
30
45
I
D
= 1.0mA, V
SB
= 0, V
GS
= +10V
23
23
23
I
D
= 1.0mA, V
SB
= 0, V
GS
= +15V
19
19
19
I
D
= 1.0mA, V
SB
= 0, V
GS
= +20V
17
I
D
= 1.0mA, V
SB
= 0, V
GS
= +25V
AC ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
SD211
TYP MAX MIN
SD213
TYP MAX MIN
SD215
TYP MAX
UNITS
TEST CONDITIONS
MIN
gfs
Forward
Transconductance
10
15
10
15
10
15
ms
V
DS
= 10V, V
SB
= 0V,
I
D
= 20mA, f = 1kHz
SMALL SIGNAL CAPACITANCES
C
ISS
Gate Node
2.4
3.5
2.4
3.5
2.4
3.5
pF
V
DS
= 10V, f = 1MHz
V
GS
= V
BS
= -15V
C
OSS
Drain Node
1.3
1.5
1.3
1.5
1.3
1.5
C
RSS
Source Node
0.3
0.5
0.3
0.5
0.3
0.5
Information furnished by Calogic is believed to be accurate and reliable. However, no responsibility is assumed for its use: nor for any infringement of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent rights of Calogic.
CALOGIC CORPORATION,
237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025
PARAMETER
SD211
+30
SD212
+10
SD215
+20
UNIT
V
dc
V
DS
Drain-to-Source
V
SD
Source-to-Drain
+10
+10
+20
V
dc
V
DB
Drain-to-Body
+30
+15
+25
V
dc
V
SB
Source-to-Body
+15
+15
+25
V
dc
V
GS
Gate-to-Source
-15
+25
-15
+25
-25
+30
V
dc
V
GB
Gate-to-Body
-0.3
+25
-0.3
+25
-0.3
+30
V
dc
V
GD
Gate-to-Drain
-30
+25
-15
+25
-25
+30
V
dc
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SD212 | 制造商:CALOGIC 制造商全稱:CALOGIC 功能描述:High-Speed Analog N-Channel DMOS FETs |
| SD2-120 | 功能描述:STEP-DIMMING MODULE - 50/50-120V 制造商:thomas research products 系列:- 零件狀態(tài):有效 配件類型:調(diào)光模塊 配套使用產(chǎn)品/相關(guān)產(chǎn)品:0-10V 可調(diào)光 LED 電源 標(biāo)準(zhǔn)包裝:50 |
| SD21-200A2 | 制造商:Toyozumi 功能描述:200V / 220 / 240V 100V / 110V / 115V 2A Bulk |
| SD212DE | 制造商:Vishay Siliconix 功能描述: |
| SD213 | 制造商:LINEAR 制造商全稱:LINEAR 功能描述:HIGH SPEED DMOS FET ANALOG SWITCHES AND SWITCH ARRAYS |
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