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參數(shù)資料
| 型號： | SD2100 |
| 廠商： | CALOGIC LLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel Depletion Mode Lateral DMOS FET |
| 中文描述： | 50 mA, 15 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72 |
| 封裝： | TO-72, 4 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 26K |
| 代理商： | SD2100 |
SD2100 /SST2100
C ORPORATION
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise noted)
SYMBOL
PARAMETER
TYP
1
MIN
MAX
UNIT
TEST CONDITIONS
STATIC
V
(BR)DS
Drain-Source Breakdown Voltage
25
15
V
V
GS
= V
BS
= -5V, I
D
= 1
μ
A
I
GSS
Gate Reverse Current
±
0.05
±
1
nA
V
GS
=
±
25V, V
DS
= V
BS
= 0V
I
DSS
Saturation Drain Current
7
0.5
10
mA
V
DS
= 10V, V
GS
= V
BS
= 0V
V
GS(OFF
)
Gate-Source Cutoff
-1.5
-2
V
V
DS
= 10V, I
D
= 1
μ
A, V
BS
= 0V
V
GS
Gate-Source Voltage
-0.3
-1
1
V
DG
= 10V
V
BS
= 0V
I
D
= 5mA
0.4
0
1.5
I
D
= 10mA
r
DS(ON)
Drain-Source On-Resistance
120
200
I
D
= 100
μ
A
V
BS
= 0V
V
GS
= 0V
40
50
V
GS
= 5V
DYNAMIC
g
fs
Forward Transconductance
8000
1000
μ
S
V
DS
= 10V, V
GS
= V
BS
= 0V, f = 1kHz
g
os
Output Conductance
250
500
g
fs
Forward Transconductance
10000
7000
V
DG
= 10V, V
BS
= 0V, I
D
= 10mA, f = 1kHz
g
os
Output Conductance
350
500
C
iss
Common-Source Input Capacitance
5
6
pF
V
DS
= 10V, f = 1MHz, V
GS
= V
BS
= -5V
C
rss
Reverse Transfer Capacitance
1
2
SWITCHING
t
d(ON)
Turn-ON Time
0.7
ns
V
DD
= 5V, R
L
= 680
, V
IN
= -4V to -2V
t
r
0.4
t
OFF
Turn-OFF Time
5
Note1:
For design aid only, not subject to production testing.
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise noted)
SYMBOL
PARAMETERS/TEST CONDITIONS
LIMITS
UNITS
V
GS
Gate-Source Voltage
±
25
V
V
DS
Drain-Source Voltage
25
I
D
Drain Current
50
mA
P
D
Power Dissipation
300
mW
Power Derating
2.4
mW/
o
C
T
J
Operating Junction Temperature
-55 to 150
o
C
T
stg
Storage Temperature
-55 to 150
T
L
Lead Temperature (1/16" from case for 10 sec.)
300
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