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參數(shù)資料
| 型號： | SD203N08S10MV |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 整流器 |
| 英文描述： | 200 A, 800 V, SILICON, RECTIFIER DIODE, DO-205AB |
| 封裝： | ROHS COMPLIANT, METAL, DO-9, 1 PIN |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 251K |
| 代理商： | SD203N08S10MV |
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 93170
2
Revision: 08-Apr-08
SD203N/R Series
Vishay High Power Products
Fast Recovery Diodes
(Stud Version), 200 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE
V
IRRM MAXIMUM
TJ = 125 °C
mA
SD203N/R..S10
04
400
500
35
08
800
900
10
1000
1100
SD203N/R..S15
12
1200
1300
14
1400
1500
16
1600
1700
SD203N/R..S20
20
2000
2100
25
2500
2600
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
at case temperature
IF(AV)
180° conduction, half sine wave
200
A
85
°C
Maximum RMS current
IF(RMS)
DC at 76 °C case temperature
314
A
Maximum peak, one-cycle
non-repetitive forward current
IFSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
4990
t = 8.3 ms
5230
t = 10 ms
100 % VRRM
reapplied
4200
t = 8.3 ms
4400
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
125
kA2s
t = 8.3 ms
114
t = 10 ms
100 % VRRM
reapplied
88
t = 8.3 ms
81
Maximum I2
√t for fusing
I2
√t
t = 0.1 to 10 ms, no voltage reapplied
1250
kA2
√s
Low level value of threshold voltage
VF(TO)1
(16.7 % x
π x I
F(AV) < I < π x IF(AV)),
TJ = TJ maximum
1.00
V
High level value of threshold voltage
VF(TO)2
(I >
π x I
F(AV)), TJ = TJ maximum
1.47
Low level value of forward
slope resistance
rf1
(16.7 % x
π x I
F(AV) < I < π x IF(AV)),
TJ = TJ maximum
1.10
m
Ω
High level value of forward
slope resistance
rf2
(I >
π x I
F(AV)), TJ = TJ maximum
0.46
Maximum forward voltage drop
VFM
Ipk = 628 A, TJ = 25 °C, tp = 400 s square pulse
1.65
V
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