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參數(shù)資料
| 型號： | SD201DC |
| 廠商： | CALOGIC LLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | High-Speed Analog N-Channel Enhancement-Mode DMOS FETS |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-52 |
| 封裝： | TO-52, 4 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 32K |
| 代理商： | SD201DC |
SD200 /SD201 /SD202 /SD203 /SSTSD201 /SSTSD203
C ORPORATION
ABSOLUTE MAXIMUM RATING
(T
A
= +25
o
C unless otherwise noted)
PARAMETER
Breakdown
Voltages
SD200
SD201
SD202
SD203
UNIT
V
DS
V
DB
V
GS
+25
+25
±
40
+25
+25
-0.3
+20
-0.3
+20
-0.3
+20
+20
+20
±
40
+20
+20
-0.3
+20
-0.3
+20
-0.3
+20
V
V
V
V
V
V
V
V
V
GB
±
40
±
40
V
GD
±
40
±
40
I
D
P
T
Continuous Drain Current . . . . . . . . . . . . . . . . . . 50 mA
Power Dissipation (at or below T
C
= +25
o
C) . . . . 1.8 W
Linear Derating Factor. . . . . . . . . . . . . . . . . 18 mW/
o
C
Power Dissipation (at or below T
A
= +25C). . . 360 mW
Linear Derating Factor. . . . . . . . . . . . . . . . . 3.6 mW/
o
C
Operating Junction
Temperature Range. . . . . . . . . . . . . . -55
o
C to + 125
o
C
Storage Temperature Range . . . . . . . . -65
o
C to +175
o
C
P
D
T
j
T
s
SYMBOL
PARAMETER
200, 201
202, 203
UNIT
TEST CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
STATIC
BV
DS
Drain-Source Breakdown Voltage
25
30
20
25
V
I
D
= 1.0
μ
A, V
GS
= V
BS
= 0
BV
DB
Drain-Body Breakdown Voltage
25
20
V
I
D
= 1.0
μ
A, V
GB
= 0
Source OPEN
I
D(OFF)
Drain-Source
OFF Current
1.0
μ
A
V
DS
= 25 V
V
GS
= V
BS
= 0
1.0
V
DS
= 20 V
I
GBS
Gate-Body
Leakage
Current
SD200
±
0.1
nA
V
GV
=
±
40 V
V
DB
= V
SB
= 0
SD202
±
0.1
SD201
1.0
μ
A
V
GB
= 20 V
SD203
1.0
V
GS(th
)
Gate Threshold Voltage
0.1
1.0
2.0
0.1
1.0
2.0
V
V
DS
= V
GS
, I
D
= 1
μ
A, V
SB
= 0
r
DS(ON)
Drain-Source ON Resistance
40
70
35
50
ohms
V
GS
= 5 V, I
D
= 1 mA, V
SB
= 0
DYNAMIC
g
fs
Common-Source Forward
Transcondconductance
13
14
17
20
mS
I
D
= 20 mA, V
DS
= 15 V
f = 1 KHz, V
SB
= 0
c
iss
Common-Source Input Capacitance
2.4
3.0
3.0
3.6
pF
I
D
= 20 mA
V
DS
= 15 V
f = 1 MHz
V
SB
= 0
c
oss
Common-Source Output Capacitance
1.0
1.2
1.0
1.2
V
GS
= 0
c
rss
Common-Source
Reverse Transfer Capacitance
0.2
0.3
0.2
0.3
G
ps
Common-Source Power Gain
8.0
10
8.0
10
dB
V
DS
= 15 V
f = 1 GHz
ID = 20 mA
V
SB
= 0
NF
Noise Figure
4.5
6.0
4.0
5.0
P
i
Intercept Point
29
29
dBm
f = 2 MHz
ELECTRICAL CHARACTERISTICS (T
A
= +25
o
C unless otherwise noted)
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