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參數(shù)資料
| 型號(hào)： | SD200SD15B |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SILICON SCHOTTKY RECTIFIER DIE Extremely Low Forward Voltage Drop |
| 中文描述： | 60 A, SILICON, RECTIFIER DIODE |
| 封裝： | DIE-2 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 68K |
| 代理商： | SD200SD15B |
SENSITRON
Technical Data
Data Sheet 4940, Rev.-
SEMICONDUCTOR
221 West Industry Court
3
Deer Park, NY 11729-4681
3
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
SD200SD15A/B/C
SILICON SCHOTTKY RECTIFIER DIE
Extremely Low Forward Voltage Drop
Applications:
·
Switching Power Supply
·
Converters
·
Free-Wheeling Diodes
·
Polarity Protection Diode
Features:
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Electrically / Mechanically Stable during and after Packaging
Maximum Ratings
(1)
:
Electrical Characteristics
(1)
:
(1) in SHD package
Characteristics
Peak Inverse Voltage
Max. Average Forward Current
Symbol
V
RWM
I
F(AV)
Condition
-
Max.
15
60
Units
V
A
50% duty cycle, rectangular
wave form
8.3 ms, half Sine wave
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche
Energy
Repetitive Avalanche Current
I
FSM
860
A
E
AS
T
J
= 25
°
C, I
AS
= 12 A,
L = 0.75 mH
I
AS
decay linearly to 0 in 1
μ
s
limited by T
J
max V
A
=1.5V
R
54
mJ
I
AR
12
A
Max. Junction Temperature
Max. Storage Temperature
T
J
T
stg
-
-
-65 to +100
-65 to +100
°
C
°
C
Characteristics
Max. Forward Voltage Drop
Max. Reverse Current
Symbol
V
F1
V
F2
I
R1
Condition
Max.
0.41
0.37
20
Units
V
V
mA
@ 60A, Pulse, T
J
= 25
°
C
@ 60A, Pulse, T
J
= 100
°
C
@V
R
= 45V, Pulse,
T
J
= 25
°
C
@V
R
= 45V, Pulse,
T
J
= 100
°
C
@V
R
= 5V, T
C
= 25
°
C
f
SIG
= 1MHz,
V
SIG
= 50mV (p-p)
I
R2
1000
mA
Max. Junction Capacitance
C
T
3600
pF
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