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參數(shù)資料
| 型號(hào)： | SD200R24PSVPBF |
| 元件分類(lèi)： | 整流器 |
| 英文描述： | 200 A, 2400 V, SILICON, RECTIFIER DIODE, DO-205AC |
| 封裝： | METAL GLASS, DO-30, 1 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 146K |
| 代理商： | SD200R24PSVPBF |
SD200N/R Series
2
www.irf.com
Bulletin I2080 rev. B 11/01
Voltage
V
RRM , maximum repetitive
V
RSM , maximum non-
I
RRM max.
Type number
Code
peak reverse voltage
repetitive peak rev. voltage
@ T
J = TJ max.
VV
mA
04
400
500
08
800
900
12
1200
1300
16
1600
1700
20
2000
2100
24
2400
2500
SD200N/R
15
ELECTRICAL SPECIFICATIONS
Voltage Ratings
I
F(AV)
Max. average forward current
200
A
180° conduction, half sine wave
@ Case temperature
110
°C
I
F(AV)
Max. average forward current
220
A
180° conduction, half sine wave
@ Case temperature
100
°C
I
F(RMS) Max. RMS forward current
314
A
DC @ 95°C case temperature
I
FSM
Max. peak, one-cycle forward,
4700
t = 10ms
No voltage
non-repetitive surge current
4920
t = 8.3ms
reapplied
3950
t = 10ms
100% V
RRM
4140
t = 8.3ms
reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
110
t = 10ms
No voltage
Initial T
J = TJ max.
101
t = 8.3ms
reapplied
78
t = 10ms
100% V
RRM
71
t = 8.3ms
reapplied
I2
√t
Maximum I2
√t for fusing
1100
KA2
√s
t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1 Low level value of threshold
voltage
V
F(TO)2 High level value of threshold
voltage
r
f1
Low level value of forward
slope resistance
r
f2
High level value of forward
slope resistance
V
FM
Max. forward voltage drop
1.40
V
I
pk= 630A, TJ = TJ max, tp = 10ms sinusoidal wave
Parameter
SD200N/R
Units Conditions
Forward Conduction
KA2s
A
V
m
0.64
(I >
π x I
F(AV)),TJ = TJ max.
0.79
(16.7% x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ max.
1.00
(I >
π x I
F(AV)),TJ = TJ max.
0.90
(16.7% x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ max.
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相關(guān)代理商/技術(shù)參數(shù) |
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