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參數(shù)資料
| 型號： | SD1700C45KPBF |
| 元件分類： | 整流器 |
| 英文描述： | 1875 A, 4500 V, SILICON, RECTIFIER DIODE, DO-200AC |
| 封裝： | CERAMIC, KPUK-2 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 116K |
| 代理商： | SD1700C45KPBF |
SD1700C..K Series
2
Bulletin I2087 rev. B 04/00
www.irf.com
Voltage
V
RRM
, maximum repetitive
V
RSM
, maximum non-
I
RRM
max.
Type number
Code
peak reverse voltage
repetitive peak rev. voltage
@ T
J = TJ max.
VV
mA
24
2400
2500
30
3000
3100
SD1700C..K
36
3600
3700
75
40
4000
4100
45
4500
4600
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Parameter
Units
Conditions
Forward Conduction
I
F(AV)
Max. average forward current 2080(1000) 1875(920)
A
180° conduction, half sine wave
@ Heatsink temperature
55(85)
°C
Double side (single side) cooled
I
F(RMS)
Max. RMS forward current
3600
3280
A
@ 25°C heatsink temperature double side cooled
I
FSM
Max. peak, one-cycle forward,
24000
20000
t = 10ms
No voltage
non-repetitive surge current
25150
20950
t = 8.3ms
reapplied
20200
16800
t = 10ms
50% V
RRM
21150
17600
t = 8.3ms
reapplied
Sinusoidal halfwave,
I2 t
Maximum I2t for fusing
2890
2000
t = 10ms
No voltage
Initial T
J
= T
J
max.
2630
1826
t = 8.3ms
reapplied
2040
1415
t = 10ms
50% V
RRM
1860
1292
t = 8.3ms
reapplied
I2
√t
Maximum I2
√t for fusing
28900
20000
KA2
√s t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1 Low level value of threshold
voltage
V
F(TO)2 High level value of threshold
voltage
r
f1
Low level value of forward
slope resistance
r
f2
High level value of forward
slope resistance
V
FM
Max. forward voltage drop
1.81
2.11
V
I
pk
= 4000A, T
J
= T
J
max, t
p
= 10ms sinusoidal wave
A
KA2s
SD1700C..K
24 to 36
40 to 45
V
m
0.21
0.29
(I >
π x I
F(AV)),TJ = TJ max.
0.23
0.31
(16.7% x
π x I
F(AV)
< I <
π x I
F(AV)
), T
J
= T
J
max.
1.02
0.99
(I >
π x I
F(AV)),TJ = TJ max.
0.89
0.88
(16.7% x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ max.
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