參數(shù)資料
型號(hào)： SD1553C30S30K
廠商： VISHAY SEMICONDUCTORS
元件分類： 整流器
英文描述： 1650 A, 3000 V, SILICON, RECTIFIER DIODE, DO-200AC
封裝： KPUK-2
文件頁數(shù)： 9/10頁
文件大?。?/td> 227K
代理商： SD1553C30S30K
SD1553C..K Series
8
Bulletin I2091 rev. B 04/00
www.irf.com
0
20
40
60
80
0
4 0 0
80 0
1 200
160 0
2 000
T = 2 5 ° C
J
Fo
rw
a
rd
R
e
c
o
v
e
ry
(V
)
T = 150 ° C
J
SD 15 53C ..S 20K Se rie s
R a t e O f R ise O f Fo rw ard C u rre n t - di/d t ( A / u s)
I
V
FP
0
20
40
60
80
100
0
4 0 0
80 0
1 2 0 0
1 60 0
2 00 0
T = 2 5 ° C
J
Fo
rw
a
rd
R
e
c
o
v
e
ry
(
V
)
T = 150 °C
J
R at e O f Ri se O f Fo rw ard Cu rre nt - di/ dt (A/ u s)
S D 1553 C ..S 30K Se r ies
I
V
FP
Fig. 20 - Typical Forward Recovery Characteristics
Fig. 21 - Typical Forward Recovery Characteristics
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
10
1 0 0
1 000
Ra te O f Fall O f Fo rw ard C urre nt - di/d t (A /s)
M
a
x
im
u
m
Re
v
e
rs
e
Re
c
o
v
e
ry
Ti
m
e
-
Tr
r(
s)
50 0 A
I
= 1 50 0 A
Sin e Puls e
1000 A
FM
SD 1 553C ..S 20K S e ries
T = 1 50 °C ; V > 100V
r
J
0
20 0
40 0
60 0
80 0
10 00
12 00
14 00
0
5 0
100 1 5 0 2 00 2 5 0 3 00
M
a
x
imu
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
h
a
rg
e
-
Q
rr
(
C
)
Ra te O f Fall O f Fo rw ard C urre nt - di/d t (A /s)
500 A
I
= 15 00 A
Sine Puls e
10 00 A
FM
S D 155 3C ..S20K Se rie s
T = 150 °C ; V
> 100V
J
r
Fig. 23 - Recovery Charge Characteristics
0
10 0
20 0
30 0
40 0
50 0
60 0
70 0
0
5 0
1 0 0 15 0 2 00 250 300
M
a
xi
m
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
u
rr
e
n
t-
Irr
(A
)
Ra te O f F a ll O f F o rw a rd Cu rrent - d i/d t ( A/s )
I
= 1 500 A
Sine Pulse
10 00 A
500 A
FM
SD 155 3C ..S20K Se rie s
T = 1 50 ° C ; V
> 100V
J
r
Fig. 24 - Recovery Current Characteristics
Fig. 22 - Recovery Time Characteristics
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
10
10 0
1 000
Ra te Of Fall O f Fo rw ard C urrent - di/d t ( A/s)
M
a
x
im
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
T
im
e
-T
rr
(
s)
500 A
I
= 150 0 A
Sine Pulse
100 0 A
FM
S D 1553C ..S 30K S e ries
T = 150 °C ; V > 1 00V
r
J
Fig. 25 - Recovery Time Characteristics
0
20 0
40 0
60 0
80 0
10 00
12 00
14 00
16 00
0
5 0
1 00 150 20 0 2 50 3 0 0
M
a
x
imu
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
h
a
rg
e
-
Q
rr
(
C
)
Ra te O f Fall O f Fo rw ard C urre nt - di/d t (A /s)
500 A
I
= 150 0 A
Sine Pu ls e
10 00 A
FM
SD 1553C ..S3 0K S e ries
T = 1 50 ° C ; V > 1 00V
J
r
Fig. 26 - Recovery Charge Characteristics
Fig. 27 - Recovery Current Characteristics
0
10 0
20 0
30 0
40 0
50 0
60 0
70 0
0
5 0
1 0 0 15 0 2 00 25 0 3 0 0
M
a
xi
m
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
u
rre
n
t-
Irr
(A
)
500 A
Ra te Of Fa ll Of Fo rwa rd C urren t - d i/d t (A/s )
I
= 1 50 0 A
Sine Puls e
1000 A
FM
SD 1553C ..S30K Se ries
T = 150 ° C ; V
> 100V
J
r
相關(guān)PDF資料
PDF描述
SD1553C30S30KPBF 1650 A, 3000 V, SILICON, RECTIFIER DIODE, DO-200AC
SD1553C25S30K 1650 A, 2500 V, SILICON, RECTIFIER DIODE, DO-200AC
SD1553C18S30KPBF 1650 A, 1800 V, SILICON, RECTIFIER DIODE, DO-200AC
SD1553C25S20KPBF 1825 A, 2500 V, SILICON, RECTIFIER DIODE, DO-200AC
SD1553C22S30K 1650 A, 2200 V, SILICON, RECTIFIER DIODE, DO-200AC
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