參數(shù)資料
型號: SD1410-002L
元件分類: 光敏三極管
英文描述: PHOTO DARLINGTON DETECTOR
封裝: METAL CAN PACKAGE-2
文件頁數(shù): 1/4頁
文件大?。?/td> 364K
代理商: SD1410-002L
Silicon Photodarlington
SD1410
DESCRIPTION
FEATURES
Compact metal can coaxial package
24 (nominal) acceptance angle
High output currents
Wide sensitivity ranges
Wide operating temperature range
(- 55C to +125C)
Mechanically and spectrally matched to SE1450
and SE1470 infrared emitting diodes
The SD1410 is an NPN silicon photodarlington mounted
in a glass lensed metal can coaxial package. The
package may have a tab or second lead welded to the
can as an optional feature (SD1410-XXXL). Both leads
are flexible and may be formed as required to fit various
mounting configurations.
INFRA-63.TIF
OUTLINE DIMENSIONS in inches (mm)
3 plc decimals
±0.005(0.12)
Tolerance
2 plc decimals
±0.020(0.51)
.106(2.69)
DIA
.076(1.93)
COLLECTOR
EMITTER
MIN
.095(2.41) DIA
.020(0.51)
DIA
.091(2.26)
.079(2.01)
.062(1.57) DIA
1.000(25.40)
.122(3.10)
.010(0.25)
~ ~
DIM_20a.ds4
SD1410-XXX
.106(2.69)
DIA
.076(1.93)
COLLECTOR
EMITTER
.095(2.41) DIA
.020
(0.51) DIA
.091(2.26)
.079(2.01)
.062(1.57) DIA
.122(3.10)
.010(0.25)
~ ~
.020
(0.51) DIA
~
TYPICAL MIN
1.000(25.40)
DIM_20b.ds4
SD1410-XXXL
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
152
相關PDF資料
PDF描述
SD1420-002L PHOTO DIODE
SD1440-002L PHOTO TRANSISTOR DETECTOR
SD1440-001 PHOTO TRANSISTOR DETECTOR
SD1440-004L PHOTO TRANSISTOR DETECTOR
SD1440-003 PHOTO TRANSISTOR DETECTOR
相關代理商/技術參數(shù)
參數(shù)描述
SD1410-003 功能描述:光電晶體管 Infrared Sensors RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
SD1410-003L 功能描述:光電晶體管 24deg 4.0mA Coaxial RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
SD1410-003L 制造商:Honeywell Sensing and Control 功能描述:OPTICAL SENSOR (PHOTODETECTOR - "P-N") P
SD1410-004 功能描述:光電晶體管 Silicon Photodarlington RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
SD1410-004L 功能描述:光電晶體管 INFRARED SENSORS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1