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參數(shù)資料
| 型號(hào)： | SD1166-21-11-301 |
| 元件分類： | 光敏二極管 |
| 英文描述： | PHOTO DIODE |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 92K |
| 代理商： | SD1166-21-11-301 |
Lateral Effect Position Sensing Photodiodes
Specifications
Responsivity:
0.40 A/W typical @ 800nm.
Non-Uniformity:
± 5% (1mm spot) typical.
Part Number
Active Area
Storage &
Operating Temp.
Position
Measurement
Accuracy
Position
Resolution1
Inter-Electrode
Resistance
Dark
Current2 @
5V
Capacitance3 @ 0V
Response
Time4
.
in.
(mm)
(C
° )
(typ)
(cm)
(typ)
(/
√ Hz)
(K
)
(nA)
(typ)
(pfd)
(typ)
(KHz)
SD 200-21-21-301
.20 x .076
(5 x 1.93)
-40 to 80
± .01
1.4
20
200
35
SD 1166-21-11-301
1.166 x .146
(29.6 x 3.7)
-40 to 80
± .06
8.3
2
1,000
13,000
12
SD 386-22-21-251
.390 sq.
(9.9 sq.)
-40 to 80
± .10
2.8
1.5
1,000
1,500
35
1.
Minimum detectable displacement with 100A signal current (5.6 pA/
√ Hz) and position sensitivity defined as
where
is responsivity,
is power (watts) and
is the cell mechanical radius (cm).
2.
Dark Current varies with temperature as follows: for T>23
° C, I
D=1.09
TI
D23, and for T<23° C, ID=ID23/1.09
T, where
T is
the temperature difference from 23
° C, and I
D23 is the dark current at 23° C.
3.
Typical values are listed in the table. Maximum value is 20% higher than the typical value.
4.
Response times listed are for the rising or falling edge, and were measured at 830nm with a 50
load. Shorter wavelengths will
result in faster rise and fall times.
SD 200-21-21-301
SD 1166-21-11-301
Lateral
file:///D|/WEB SITES/API TEMP/TMP7nbegmqdx.htm (1 of 2) [7/17/2001 11:08:31 AM]
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