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參數(shù)資料
| 型號(hào)： | SD1100C32L |
| 元件分類(lèi)： | 整流器 |
| 英文描述： | 910 A, 3200 V, SILICON, RECTIFIER DIODE, DO-200AB |
| 封裝： | CERAMIC, BPUK-2 |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大小： | 112K |
| 代理商： | SD1100C32L |
SD1100C..L Series
3
Bulletin I2073 rev. D 04/00
www.irf.com
Parameter
Units
Conditions
T
J
Max. junction operating temperature range
-40 to 180
-40 to 150
T
stg
Max. storage temperature range
-55 to 200
R
thJ-hs
Max. thermal resistance, junction
0.11
DC operation single side cooled
to heatsink
0.05
DC operation double side cooled
F
Mounting force, ± 10%
9800
N
(1000)
(Kg)
wt
Approximate weight
250
g
Case style
DO-200AB (B-PUK)
See Outline Table
°C
K/W
SD1100C..L
04 to 20
25 to 32
Ordering Information Table
1
-
Diode
2
-
Essential part number
3
-
0 = Standard recovery
4
-
C = Ceramic Puk
5
-
Voltage code: Code x 100 = V
RRM
(See Voltage Ratings table)
6
-
L = Puk Case DO-200AB (B-PUK)
Sinusoidal conduction
Rectangular conduction
Conduction angle
Units
Conditions
Single Side Double Side
180°
0.011
0.008
120°
0.014
0.015
0.014
90°
0.018
0.019
60°
0.026
0.027
0.028
30°
0.045
0.046
K/W
T
J = TJ max.
1
23
4
5
6
Device Code
SD 110
0
C
32
L
R
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs when devices operate at different conduction angles than DC)
Thermal and Mechanical Specifications
相關(guān)PDF資料 |
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| SD1100C16LPBF | 1170 A, 1600 V, SILICON, RECTIFIER DIODE, DO-200AB |
| SD1100C20LPBF | 1170 A, 2000 V, SILICON, RECTIFIER DIODE, DO-200AB |
| SD1100C25L | 910 A, 2500 V, SILICON, RECTIFIER DIODE, DO-200AB |
| SD1100C14CPBF | 1400 A, 1400 V, SILICON, RECTIFIER DIODE |
| SD400C14CPBF | 800 A, 1400 V, SILICON, RECTIFIER DIODE, DO-200AA |
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