參數(shù)資料
型號(hào): SD1100C32CPBF
元件分類: 整流器
英文描述: 1100 A, 3200 V, SILICON, RECTIFIER DIODE
封裝: CERAMIC, B-43, PUK-2
文件頁(yè)數(shù): 2/7頁(yè)
文件大?。?/td> 112K
代理商: SD1100C32CPBF
SD1100C..C Series
2
Bulletin I2072 rev. D 04/00
www.irf.com
Voltage
V
RRM
, maximum repetitive
V
RSM
, maximum non-
I
RRM
max.
Type number
Code
peak reverse voltage
repetitive peak rev. voltage
@ T
J
= T
J
max.
VV
mA
04
400
500
08
800
900
12
1200
1300
16
1600
1700
20
2000
2100
25
2500
2600
30
3000
3100
32
3200
3300
ELECTRICAL SPECIFICATIONS
Voltage Ratings
SD1100C..C
35
Forward Conduction
Parameter
Units
Conditions
I
F(AV)
Max. average forward current
1400(795) 1100(550)
A
180° conduction, half sine wave
@ Heatsink temperature
55(85)
°C
Double side (single side) cooled
I
F(RMS)
Max. RMS forward current
2500
2000
A
@ 25°C heatsink temperature double side cooled
I
FSM
Max. peak, one-cycle forward,
13000
10500
t = 10ms
No voltage
non-repetitive surge current
13600
11000
t = 8.3ms
reapplied
10930
8830
t = 10ms
100% V
RRM
11450
9250
t = 8.3ms
reapplied
Sinusoidal halfwave,
I2 t
Maximum I2t for fusing
846
551
t = 10ms
No voltage
Initial T
J
= T
J
max.
772
503
t = 8.3ms
reapplied
598
390
t = 10ms
100% V
RRM
546
356
t = 8.3ms
reapplied
I2
√t
Maximum I2
√t for fusing
8460
5510
KA2
√s t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1 Low level value of threshold
voltage
V
F(TO)2 High level value of threshold
voltage
r
f1
Low level value of forward
slope resistance
r
f2
High level value of forward
slope resistance
V
FM
Max. forward voltage drop
1.31
1.44
V
I
pk
= 1500A, T
J = TJ max, t
p
= 10ms sinusoidal wave
A
KA2s
SD1100C..C
04 to 20 25 to 32
V
m
0.26
0.38
(I >
π x I
F(AV)
),T
J
= T
J
max.
0.35
0.40
(16.7% x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ max.
0.94
0.88
(I >
π x I
F(AV)
),T
J
= T
J
max.
0.78
0.84
(16.7% x
π x I
F(AV)
< I <
π x I
F(AV)
), T
J
= T
J
max.
相關(guān)PDF資料
PDF描述
SD1100C08C 1400 A, 800 V, SILICON, RECTIFIER DIODE
SD1100C12C 1400 A, 1200 V, SILICON, RECTIFIER DIODE
SD1100C25C 1100 A, 2500 V, SILICON, RECTIFIER DIODE
SD1100C30C 1100 A, 3000 V, SILICON, RECTIFIER DIODE
SD1100C32C 1100 A, 3200 V, SILICON, RECTIFIER DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SD1100C32L 功能描述:DIODE STD REC 3200V 910A B-PUK RoHS:是 類別:半導(dǎo)體模塊 >> 二極管,整流器 系列:- 標(biāo)準(zhǔn)包裝:10 系列:- 電壓 - 在 If 時(shí)為正向 (Vf)(最大):1.45V @ 30A 電流 - 在 Vr 時(shí)反向漏電:15µA @ 400V 電流 - 平均整流 (Io)(每個(gè)二極管):30A 電壓 - (Vr)(最大):400V 反向恢復(fù)時(shí)間(trr):65ns 二極管類型:標(biāo)準(zhǔn) 速度:快速恢復(fù) = 200mA(Io) 二極管配置:2 個(gè)獨(dú)立式 安裝類型:底座安裝 封裝/外殼:ISOTOP 供應(yīng)商設(shè)備封裝:ISOTOP? 包裝:管件
SD1100CHP 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE D MOS POWER FETS
SD1100DD 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE D MOS POWER FETS
SD1100HD 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE D MOS POWER FETS
SD1100P 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:1.0 Amp Schottky Barrier Rectifiers