參數(shù)資料
型號: SD1100C32C
廠商: VISHAY SEMICONDUCTORS
元件分類: 整流器
英文描述: 1100 A, 3200 V, SILICON, RECTIFIER DIODE
封裝: CERAMIC, B-43, PUK-2
文件頁數(shù): 5/7頁
文件大?。?/td> 112K
代理商: SD1100C32C
SD1100C..C Series
5
Bulletin I2072 rev. D 04/00
www.irf.com
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - Current Ratings Characteristics
Fig. 6 - Current Ratings Characteristics
Fig. 7 - Current Ratings Characteristics
Fig. 8 - Current Ratings Characteristics
20
40
60
80
100
120
140
160
180
0
4 0 0
8 0 0
1 200
160 0
200 0
30 °
60 °
90 °
120 °
180 °
A v era g e F o rw a rd C u rr e n t ( A )
M
a
xi
m
u
m
A
llo
w
a
bl
e
He
at
si
n
k
T
e
m
p
e
rat
u
re
(
°C)
Co nd uc tio n A ng le
(D ou b le S id e C o o led )
R
( D C ) = 0.038 K /W
th J -hs
S D 110 0C ..C Se rie s ( 400V t o 2000V )
0
20
40
60
80
100
120
140
160
180
0
500
1 000
1500
200 0
250 0
300 0
30 °
60 °
90 °
180 °
DC
12 0 °
A v e ra g e F o rw a r d C u rre n t ( A )
M
a
xi
m
u
m
A
llo
w
a
bl
e
He
at
si
n
k
T
e
m
p
e
rat
u
re
(
°C)
Co nd uc tion Pe riod
( D oub le Sid e C o oled )
R
( D C ) = 0 .0 3 8 K/ W
th J- hs
S D 1 100C ..C S e ries ( 400V t o 2000V )
20
30
40
50
60
70
80
90
100
110
120
130
140
150
0
200
40 0
600
80 0 1000 1200 1 40 0
30°
60 °
90°
180°
DC
120°
Av erage Forward Curr en t (A)
M
a
x
imu
m
A
llo
w
a
b
le
H
e
a
ts
in
k
T
e
mp
e
ra
tu
re
(
°C)
C o nd u ct ion Pe riod
SD1100 C..C Ser ies (25 00V to 32 00V)
(Single Side Cooled)
R
(DC) = 0.076 K/W
th J -hs
40
50
60
70
80
90
100
110
120
130
140
150
0
200
400
600
800
30°
60 °
90°
120 °
18 0°
Average Forward Current ( A)
M
a
x
im
u
m
A
llo
w
a
bl
e
He
at
si
n
kT
e
m
p
e
rat
u
re
C)
Co nd uct io n An g le
SD 1100 C..C Series (250 0V to 32 00V )
(Single Side Cooled)
R
(DC) = 0.07 6 K/W
thJ - hs
20
30
40
50
60
70
80
90
100
110
120
130
140
150
0
400
80 0
1200
1600
2000
2400
30°
60°
90°
180 °
DC
12 0°
Avera ge Forward Curren t (A)
M
a
x
im
u
m
A
llo
w
a
bl
e
He
at
si
n
k
T
e
mpe
rat
u
re
(
°C)
Co nd uc tion Pe rio d
SD11 00C..C Series (2500 V to 3200 V)
(Double Side Cooled)
R
(D C) = 0.0 38 K/W
thJ -h s
20
30
40
50
60
70
80
90
10 0
11 0
12 0
13 0
14 0
15 0
0
200
40 0
600
800 1000 1200 1400
30°
60°
90°
120°
180°
Average Forw ard Cur ren t (A)
M
a
xi
mu
m
A
llo
w
a
bl
e
He
at
si
n
k
T
e
m
p
e
rat
u
re
(
°C)
Co nd uct io n A ng le
SD 1100 C..C Series (25 00V to 320 0V)
(Double Side Cooled )
R
(D C) = 0.038 K/W
thJ -h s
相關PDF資料
PDF描述
SD1100C32CPBF 1100 A, 3200 V, SILICON, RECTIFIER DIODE
SD1100C08C 1400 A, 800 V, SILICON, RECTIFIER DIODE
SD1100C12C 1400 A, 1200 V, SILICON, RECTIFIER DIODE
SD1100C25C 1100 A, 2500 V, SILICON, RECTIFIER DIODE
SD1100C30C 1100 A, 3000 V, SILICON, RECTIFIER DIODE
相關代理商/技術參數(shù)
參數(shù)描述
SD1100C32L 功能描述:DIODE STD REC 3200V 910A B-PUK RoHS:是 類別:半導體模塊 >> 二極管,整流器 系列:- 標準包裝:10 系列:- 電壓 - 在 If 時為正向 (Vf)(最大):1.45V @ 30A 電流 - 在 Vr 時反向漏電:15µA @ 400V 電流 - 平均整流 (Io)(每個二極管):30A 電壓 - (Vr)(最大):400V 反向恢復時間(trr):65ns 二極管類型:標準 速度:快速恢復 = 200mA(Io) 二極管配置:2 個獨立式 安裝類型:底座安裝 封裝/外殼:ISOTOP 供應商設備封裝:ISOTOP? 包裝:管件
SD1100CHP 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE D MOS POWER FETS
SD1100DD 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE D MOS POWER FETS
SD1100HD 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE D MOS POWER FETS
SD1100P 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:1.0 Amp Schottky Barrier Rectifiers